一种有效去除CMP后铜表面CuO颗粒的清洗剂  

A Cleaning Agent for Effectively Removing CuO Particles on the Copper Surface After the CMP

作　　者：杨志欣[1] 高宝红[1] 王辰伟[1] 孙鸣[1] 孙铭斌 张男男[1] 程川[1] 檀柏梅[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《微纳电子技术》2015年第1期64-68,共5页Micronanoelectronic Technology

基　　金：国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308-003)

摘　　要：在集成电路制造过程中,巨大规模集成电路(GLSI)多层铜布线片化学机械抛光(CMP)后铜线条表面会生成一些CuO颗粒,这些颗粒不仅对器件性能有很大危害,而且会降低器件可靠性。对CMP过程中CuO颗粒的产生机理进行了研究,针对CMP后铜表面所产生的CuO颗粒,采用主要有效成分为FA/OII型螯合剂和FA/OI型非离子表面活性剂的碱性清洗剂,结合聚乙烯醇(PVA)刷洗的方式对其进行清洗。利用金相显微镜、原子力显微镜(AFM)以及扫描电子显微镜(SEM)对铜光片清洗前后进行检测。实验结果表明,该清洗剂不仅能有效去除GLSI多层铜布线片CMP后在铜线条表面残留的CuO颗粒,而且成分简单环保,不含金属离子,因此有很好的应用前景。In the manufacturing process of the integrated circuit,some CuO particles will be generated on the copper wire surfaces of great large scale integration（GLSI）multilayer copper wiring chips after the chemical mechanical polishing（CMP）.These particles largely harm the device performances and reduce the device reliability.The produce mechanism of CuO particles in CMP process was studied.Using the alkaline cleaning agent with the FA/OII type chelating agent and FA/OI type nonionic surfactant as the main effective components,and combining with PVA scrubbing,the CuO particles on the copper surface were removed after CMP.The copper wafers before and after cleaning were tested by metallographic microscope,atomic force microscope（AFM）and scanning electron microscope（SEM）.The experiment results show that the cleaning agent can effectively remove the CuO particles on the copper wire surface of GLSI multilayer copper wiring chips generated in CMP process,and its ingredient without metal ions is simple and environmentally friendly,thus it has a good application prospect.

关 键 词：CuO颗粒 清洗剂 化学机械抛光(CMP) 颗粒去除 表面活性剂 

分 类 号：TN305.2[电子电信—物理电子学]