氧化热处理对VO_2薄膜红外光学相变特性的影响  

Effects of oxidational annealing on infrared optical phase transition properties of VO_2 thin films

作　　者：徐凯[1,2] 路远[1,2] 凌永顺[1,2] 乔亚[1,2] 唐聪[1,2] 

机构地区：[1]电子工程学院,安徽合肥230037 [2]红外与低温等离子体安徽省重点实验室,安徽合肥230037

出　　处：《激光与红外》2015年第1期53-57,共5页Laser & Infrared

基　　金：脉冲功率激光技术国家重点实验室主任基金项目(No.SKL2013ZR03)资助

摘　　要：采用直流磁控溅射法在硅基底上制备 VO2薄膜，并对薄膜氧化热处理。分别对热处理前后薄膜进行 X 射线衍射（XRD）、傅里叶变换红外光谱（FTIR）透射率测试，分析了热处理对 VO2薄膜晶相成分与红外透射率相变特性的影响。实验分析表明，经热处理的 VO2发生非晶态向晶态转变，单斜金红石结构 VO2（011）晶体具有明显择优取向，晶粒尺寸均匀度提高，且薄膜的红外透射率具有明显相变特性，相变温度为60.5℃，3-5μm、8-12μm 波段的红外透射率对比值达到99％，适合应用于红外探测器的激光防护研究。VO2 thin films were prepared by DC magnetron sputtering on Si substrate,and then were annealed by oxida-tion.XRD and FITR were employed to study the effects of oxidational annealing on the crystal composition and infra-red transmission properties of VO2 thin films.The results of analysis show that the VO2 crystal after annealing has changed from non -crystalline structure to crystalline structure.The size of monoclinic rutile structure VO2 （011） which has a better crystal orientation is bigger.After oxidational annealing,the VO2 thin films possess a obvious phase transition properties with uniform size of crystal,the phase transition temperature is 60.5 ℃,and the change range of infrared transmission rate at 3 -5 μm and 8 -12 μm has reached to 99%.VO2 thin films which have obvious phase transition properties in infrared transmission are ideal material for the research for protecting infrared detector from la-ser attacking.

关 键 词：二氧化钒 直流磁控溅射 氧化热处理 红外特性 

分 类 号：TB321[一般工业技术—材料科学与工程]