典型FLASH存储器^(60)Coγ电离辐射效应测试与分析  

Testing and analysis of ^(60)Co γ ionizing radiation effects on typical flash memory

作　　者：宋卫 曲狄 吾勤之 

机构地区：[1]上海航天电子技术研究所,上海201109 [2]上海航天技术基础研究所,上海201109

出　　处：《核技术》2015年第1期12-16,共5页Nuclear Techniques

摘　　要：通过测量卫星用FLASH存储器的内部存储数据逻辑状态出错(WW≠0)、电源电流、输出高低电平电压、输入漏电流以及交流参数随辐照剂量的变化情况,对FLASH存储器的电离辐射效应损伤规律、敏感参数进行了研究。研究结果表明,FLASH存储器的电离辐射效应损伤规律主要表现为随辐照剂量增加,存储数据逻辑状态出现错误,数据读取、数据擦除以及维持模式下的电源电流逐渐增大,这些参数可以作为辐照敏感参数;动态辐照偏置下存储数据逻辑状态出错时的剂量阈值比静态辐照偏置和不加电辐照偏置条件下大一个数量级以上。Background： Flash memory is a critical part of electrical system on satellite, its characteristics of antiradiation is of great significance for system design. Purpose and Methods： we need to investigate the ionizing irradiation damage and sensitive parameters through testing date logic state, power current, output voltage level, leakage current and Alternating Current parameters. Results： Date logic state appears some errors along with increasing of total radiation dose. Also power current on reading, erasing and holding status increase as radiation dose rising. The failure level on dynamic bias is one-order-magnitude higher than that on static and no power biases. Logic state and power current are sensitive parameters through the experiment results. Conclusion： Results analysis and discussion on the radiation damage phenomenon would provide a theoretical basis and method on comprehensive radiation evaluation of flash memories.

关 键 词：FLASH存储器 电离辐射效应 辐照敏感参数 辐照偏置条件 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN79