An analytic model to describe the relationship between conductance and frequency of heterojunction  

作　　者：刘昶时 

机构地区：[1]Nan Hu College, Jiaxing University

出　　处：《Journal of Semiconductors》2015年第1期1-5,共5页半导体学报（英文版）

摘　　要：The admittance measurements of a hetero-junction can be used to derive the density of the interfacial state in the hetero-junction. Hence, prediction conductance via frequency is very useful for comprehension of the admittance of a hetero-junction using a mathematical strategy. From the observations on the curve of the frequencydependent conductance of the hetero-junction an analytic model with four-parameters was developed that relates conductance to frequency; the theoretical results agree quite well with the experimental data. The model shows potential for a variety of applications including different electronic devices. The model is a practical tool that can be readily used for assessing the electronic behaviors of a hetero-junction and is scientifically justifiable. In addition, the mathematical bridge to link the density of the interfacial state of the（pyronine-B）/p-Si structure to energy implies a good route to discuses the density of the interfacial state of interfaces.The admittance measurements of a hetero-junction can be used to derive the density of the interfacial state in the hetero-junction. Hence, prediction conductance via frequency is very useful for comprehension of the admittance of a hetero-junction using a mathematical strategy. From the observations on the curve of the frequencydependent conductance of the hetero-junction an analytic model with four-parameters was developed that relates conductance to frequency; the theoretical results agree quite well with the experimental data. The model shows potential for a variety of applications including different electronic devices. The model is a practical tool that can be readily used for assessing the electronic behaviors of a hetero-junction and is scientifically justifiable. In addition, the mathematical bridge to link the density of the interfacial state of the（pyronine-B）/p-Si structure to energy implies a good route to discuses the density of the interfacial state of interfaces.

关 键 词：conductance frequency predict hetero-junction density of interfacial state 

分 类 号：O471[理学—半导体物理]