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作 者:万文艳[1] 程新红[1] 宁振球[1] 董春雷[1]
机构地区:[1]中国科学院上海微系统与信息技术研究所汽车电子工程中心,上海200050
出 处:《微电子学》2014年第6期759-762,766,共5页Microelectronics
基 金:国家极大规模集成电路制造装备及成套工艺重大专项资助项目(2012ZX02503-003)
摘 要:设计了一款带有误差放大器和电阻修调电路的分段曲率补偿基准电压源。通过分段电流补偿降低了温度系数;采用数字修调网络和熔丝修调网络,减小了电阻随机误差;采用误差放大器提高了电源抑制比,使基准电压精度得到显著提高。电路基于XFAB 0.35μm高压CMOS工艺设计,仿真结果显示,在-40℃~125℃的温度范围内和多种工艺角下,当输出基准电压为3.0875V时,温度系数为4.1×10^-6/℃,低频电源抑制比达到-70dB。该电路的性能指标大大优于同类型产品,是一款适用于汽车电子芯片的高精度电压基准源。A curvature-compensated bandgap reference with an error amplifier and trimming resistive circuits was proposed. In the circuit, the current compensation was made respectively at low and high operation temperature ranges to achieve a low temperature coefficient. Trimming resistive circuits were designed to reduce the mismatch error of resistors. Also, an error amplifier was designed to improve the power supply rejection ratio. The circuit was designed in XFAB 0.35 tim HV CMOS process. Simulated results showed that the temperature coefficient was 4.1 × 10^-6/℃, the PSRR at low frequency was --70 dB for the output voltage of 3. 0875 V, the temperature range of --40 ℃ ~125 ℃, and various process corners. Its simulated performance was better than that of the existing products published. It can be used as an accurate voltage reference for analog and/or mixed analog/digital ICs in automotive electronic applications.
分 类 号:TN433[电子电信—微电子学与固体电子学]
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