具有二氧化硅温度补偿层的薄膜体声波谐振器的建模与分析(英文)  

Modelingand simulation on film bulk acoustic resonator with silicon oxide temperature-compensated layer

作　　者：高杨[1] 周斌[2] 何移[2] 何婉婧[3] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900 [2]西南科技大学信息工程学院,四川绵阳621010 [3]重庆大学新型微纳器件与系统技术国防重点学科实验室,重庆400044

出　　处：《强激光与粒子束》2015年第1期169-174,共6页High Power Laser and Particle Beams

基　　金：supported by SciTech Found of the CAEP Key Laboratory of Precision Manufacturing Technology(2012CJMZZ00009,2014ZA001);Visiting Scholar Found of the State Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology(Chongqing University)(2013MS04);IEE CAEP SciTech Innovation Found(S20141203);SWUST Postgraduate Innovation Found(13YCJJ36,14YCX107,14YCX109,14YCX111)

摘　　要：薄膜体声波谐振器(FBAR)的谐振频率会受到外界环境温度的影响而产生漂移,对于FBAR滤波器而言,这种温度-频率漂移特性会导致其中心频率、插入损耗、带内纹波等性能发生变化,降低其在电学应用中的可靠性。应用ANSYS有限元分析软件,对一个典型Mo-AlN-Mo三层结构的FBAR进行了温度-频率漂移特性的仿真,得到其在[-50℃,150℃]温度范围内的频率温度系数(TCF)约为-35×10-6/℃。在FBAR叠层薄膜结构中添加了一层具有正温度系数的二氧化硅温度补偿层,分析了该补偿层厚度对FBAR的温度-频率漂移特性、谐振频率和机电耦合特性的影响。设计了具有一层二氧化硅温度补偿层的FBAR叠层,由Mo/AlN/SiO2/Mo多层薄膜构成,仿真得到其频率温度系数为0.872×10-6/℃;与没有温度补偿层的FBAR相比,温度稳定性得以显著改善。The property of temperature-frequency drift has an effect on the passband ripples,center frequency and insertion loss of film bulk acoustic resonator（FBAR）filters,reducing the reliability of its electrical application.A temperature-frequency drift simulation of a typical Mo/AlN/Mo 3-layered FBAR is achieved using finite element analysis software ANSYS,and the simulated temperature coefficient of frequency is about-35×10^-6/°C within the temperature range [-50°C,150°C].By adding a SiO2 temperature compensated layer with positive temperature coefficient in the FBAR stacked films structure,the effects of the compensated layer thickness on temperature-frequency drift,resonant frequency and electromechanical coupling are analyzed.The simulated temperature-frequency coefficient of the FBAR stack with a SiO2 temperature compensated layer,which is composed of Mo/AlN/SiO2/Mo multi-layer films,is about 0.872×10^-6/°C,which shows significantly improved temperature stability compared to that without the temperature compensated layer.

关 键 词：射频微电子机械系统 薄膜体声波谐振器 频率漂移 温度系数 稳定性 有限元分析 

分 类 号：TN713[电子电信—电路与系统]