衬底偏压对掺铬类石墨碳膜组织、性能及碳键结构的影响  

Influences of Substrate Bias Voltage on Microstructure,Properties and Carbon Element′s Valence Bond Structure of Cr-doped Graphite-like Carbon Film

作　　者：张永宏[1] 杨丽雯 王玉梅[1] 房东明 

机构地区：[1]陕西理工学院材料科学与工程学院,汉中723000

出　　处：《机械工程材料》2014年第11期66-71,共6页Materials For Mechanical Engineering

基　　金：陕西省自然科学基金资助项目(2012JM6016);陕西省教育厅科研计划项目(2013JK0915);陕西理工学院人才启动项目(SLGQD1104);陕西理工学院科研计划项目(SL-GKY11-02)

摘　　要：采用非平衡磁控溅射离子镀技术在不同衬底偏压下沉积了掺铬类石墨非晶碳膜,研究了衬底偏压对其显微组织、硬度、内应力、结合强度和碳键结构的影响,着重分析了衬底偏压对碳膜硬度的影响机理。结果表明:随着衬底偏压增大,掺铬类石墨碳膜的显微组织先是趋于致密化,偏压过大时则会形成受损的凝絮状结构,而碳膜的硬度、内压应力和结合强度均先增后减;碳膜的硬度和内压应力在-90V偏压下达到最大,分别为3 295HV和1.133GPa,此时的碳膜具有最致密的显微组织和最高含量的sp3碳组分;碳膜的结合强度则在-65V偏压下达到最大,其临界载荷为53.8N;掺铬类石墨碳膜硬度的变化与碳膜的碳键结构、内应力和显微组织的演变存在明显的相关性。Cr-doped graphite-like amorphous carbon films were deposited by unbalanced magnetron sputter ion plating technique at different substrate bias voltages.Influences of substrate bias voltage on microstructure,hardness,internal stress,bonding strength and carbon element′s valence bond structure of the films were investigated,and the influence mechanism of substrate bias voltage on hardness was analyzed emphatically.The results show that the microstructure of the films gradually became compact initially with the increase of substrate bias voltage,and then damaged flocculation structure comes into being as the bias voltage was too high.The hardness,internal compressive stress and bonding strength of the films increased first and then decreased with the increase of substrate bias voltage.The films deposited at-90 Vpossessed the highest hardness（3 295 HV）and internal compressive stress（1.133GPa）as well as the finest microstructure and the most sp3 carbon content.The films deposited at-65 Vshowed the highest bonding strength（Lc=53.8N）.The changes of hardness of the Crdoped graphite-like carbon films were closely related with the evolutions of carbon element′s valence bond structure,internal stress and microstructure of the films.

关 键 词：非晶碳膜 衬底偏压 碳键结构 硬度 

分 类 号：TB43[一般工业技术] O484.5[理学—固体物理]