高功率LED器件的热特性分析(英文)  

Thermal Performances Analysis of High Power LED Devices

作　　者：周子超[1] 赵丽霞[1] 卢鹏志[1] 朱石超[1] 王军喜[1] 曾一平[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《半导体技术》2015年第2期101-105,共5页Semiconductor Technology

基　　金：Project Supported by the National Key Technologies Research and Development Program of the Ministry of Science and Technology of China(2011BAE01B16);Project Supported by the National Basic Research Program of China(2011CB301902);Project Supported by the Import Outstanding Technical Talent Plan of Chinese Academy of Sciences

摘　　要：Ga N基白光LED不断向高功率、高性能和长寿命方向发展,Ga N基白光LED的热性能成为在使用中的重要参数。采用瞬态热测量方式,对工作在不同的温度和驱动电流的Ga N基发光二极管的热性能进行了研究。通过比较光、电特性发现LED芯片对器件热阻影响很小,但同时管芯附着层对LED器件的热特性起着非常重要的作用。此外,热电阻随着电流和环境温度的升高而增加,主要归因于管芯附着层声子或粒子的平均自由程减小。GaN based white light-emitting diodes（ LEDs） are developing towards higher power,higher performance and longer lifetime. The thermal properties of GaN based white LEDs have become the important factors in the application. The thermal performances of GaN based LEDs were investigated by using transient thermal measurement under different case temperatures and driven currents. The optical and electrical characteristics of the devices were compared. By contrast,the influence of the chips on the overall thermal resistance is neglected. The die attach layer plays an important role in determining the thermal properties of the LEDs. Moreover,the thermal resistance of the LEDs increases with the increasing injection current and ambient temperature. Such phenomena can be attributed to the decrement of the mean free patch of phonon or particle in the die attach layer induced by the thermal resistance increase.

关 键 词：发光二极管(LED) 热阻 结温 超声波扫描显微镜 高功率 

分 类 号：TN312.8[电子电信—物理电子学]