窄带半导体光学双稳性的稳态特性  

Steady state property of dynamic optical bistability in narrow-gap semiconductors

作　　者：刘玉东 王其明 李淳飞[1] 

机构地区：[1]哈尔滨工业大学应用物理系,150006

出　　处：《中国激光》1991年第3期161-164,共4页Chinese Journal of Lasers

摘　　要：本文提出了一个窄带半导体双光子光学双稳性的稳态理论模型。分析了InSb、HgCdTe的光学双稳性的稳态特性,并从实验上获得了理想的脉冲整形效应。The steady state model of two-photon optical bistability in narrow-gap semiconductors are presented. The steady property of dynamic optical bistability in InSb and HgCdTe are analyzed and the ideal pulse shaping effect is obtained experimentally.

关 键 词：半导体光学 双稳性 半导体 稳态 

分 类 号：O472.3[理学—半导体物理]