金刚石线锯切割多晶硅片的气相刻蚀制绒研究（英文）  

Texture for Diamond Wire Sawn Multicrystalline Silicon Wafers by a Vapor Etching Method

作　　者：刘小梅[1] 陈文浩[1] 李妙[1] 周浪[1] 

机构地区：[1]南昌大学太阳能光伏学院,南昌330031

出　　处：《光子学报》2015年第1期149-154,共6页Acta Photonica Sinica

基　　金：The Photovoltaic Major Science and Technology Planned Subject in Jiangxi Province(No.2009AZD10301)

摘　　要：采用气相刻蚀制绒法研究金刚石线锯切割多晶硅片制绒.加热体积比1:3、总体积400mL的HF-HNO3酸混合溶液到90℃,使酸混合溶液受热产生气相,利用气相对金刚石线锯切割多晶硅片表面进行制绒.结果表明,制绒15min之后,硅片表面的切割纹被完全去除;小腐蚀坑密布硅片表面,尺寸小于1μm,而传统湿法酸制绒所形成的腐蚀坑尺寸大于10μm.气相刻蚀后的金刚石线锯切割多晶硅片表面的微观粗糙度比传统酸混液制绒后的金刚石线锯切割多晶硅片表面的微观粗糙度高3倍多.气相制绒效果明显,并仅有12.11%的低反射率.Vapor Etching（VE）was used to etch diamond wire sawn mc-silicon wafers.The vapor was generated from heating the acid mixture solution of HF-HNO3 in the volume ratio of 1：3（the total volume of the solution is 400mL）at 90 ℃.The results showed that etching for 15 minutes,saw marks can be removed and lots of small corrosion pits which appeared in big corrosion pits were densely covered with silicon wafer surface,the average size of the corrosion pits was about 1μm,while that by wet acid etch was over 10μm.The wafer surface roughness with VE method is actually 3times higher than that with traditional wet acid etching method.The effect of VE is obvious and the reflectivity is low to12.11%.

关 键 词：多晶硅 气相刻蚀 金刚石线锯切割 切割纹 反射率 制绒 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TN305.2[电子电信—物理电子学]