石英基底的ITO薄膜制备及光电性能  

Preparation and photoelectric properties of ITO thin films deposited on quartz substrate

作　　者：徐书林[1] 胡志强[1] 张临安[1] 聂铭歧 张海涛 

机构地区：[1]大连工业大学新能源材料研究所,辽宁大连116034 [2]锦州新世纪石英(集团)有限公司,辽宁锦州121000

出　　处：《大连工业大学学报》2015年第1期60-63,共4页Journal of Dalian Polytechnic University

基　　金：国家高技术研究发展计划(863计划)项目(2006AA05Z417);辽宁省教育厅重点实验室科技项目(2008S017)

摘　　要：采用脉冲磁控溅射法在高纯石英基底上制备了氧化铟锡(ITO)透明导电薄膜。通过X射线衍射仪、扫描电镜对石英基底上ITO薄膜的微观结构及表面形貌进行了分析,并且研究了溅射气压、溅射时间和衬底温度等工艺参数条件对以石英玻璃作基底制备的ITO薄膜的光电性能的影响。结果表明,在以石英为基底的氧化铟锡透明导电膜,在气压0.7Pa、溅射功率45 W条件下,基片温度为300℃,溅射时间为45min时,可见光透过率达83%,方块电阻达到5Ω左右。Transparent conductive indium tin oxide（ITO）films were prepared onto quartz substrate by pulsed magnetron sputtering.The microstructure and surface morphology of ITO thin films was investigated by X ray diffraction and scanning electron microscope,in order to gain the excellent electrical and optical property.The effect of sputtering time,substrate temperature and deposition pressure on the ITO films were studied.The results indicated that the visible light transmission rate of 83% sheet resistance reaches 5 Ωat quartz substrate in an indium tin oxide（ITO）transparent conductive film,pressure 0.7 Pa,sputtering power 45 W,substrate temperature 300 ℃ and sputtering time 45 min.

关 键 词：氧化铟锡薄膜 脉冲磁控溅射 石英 

分 类 号：TB321[一般工业技术—材料科学与工程]