YSZ/STO/YSZ-STO超晶格电解质薄膜低温电学特性  

Synthesis and Electrical Propertiesin 300～500℃ Range of YSZ/STO/YSZ-STO Superlattice Thin Films

作　　者：康振锋 刘文德[1] 李强[1] 郑平平[1] 范悦[1] 薄青瑞 肖玲玲[1] 丁铁柱[1] 

机构地区：[1]内蒙古大学物理科学与技术学院内蒙古自治区半导体光伏技术重点实验室,呼和浩特010021

出　　处：《真空科学与技术学报》2015年第1期33-37,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(批准号:11264025)

摘　　要：采用脉冲激光沉积法，在单侧抛光的STO基底上制备YSZ／STO／YSZ超品格薄膜。利用x射线衍射、扫描电镜和射频阻抗／材料分析仪对多层膜的物相结构、表面形貌以及电学特性等进行表征。实验结果发现，YSZ／STD／YSZ超晶格薄膜在300～500％之间，其电导活化能最小值为0．76eV，在300℃ 时测得的电导率比体材料的电导率提高了三个数量级。The Y-doped ZnO2 （YSZ）/SrTiO3 （STO）/YSZ super-lattice thin films, an electrolyte material for solid ox- ide fuel cell （SOFC）, were synthesized by pulsed laser deposition （PLD） on the polished surface of STO mono-crystalline substrate. The influence of the synthesis conditions, including but not limited to the substrate temperature, pressure,film thickness, and ratio of Ar/O2 flow rates, on the electrical properties of the oxygen-ion-conductor electrolyte of the YSZ/ STO/YSZ super-layers were investigated. The microstructures, phse-stmctures and electrical behavior of the super-lattice films were characterized with X-ray diffraction, scanning electron microscopy, and electro-chemical impedance spec- troscopy. The best crystallized, 〈 111 〉 preferentially oriented, 600 nm thick, compact super-layers were grown at 600~C. Measured at a temperature in 350- 500℃ range,the lowest conductivity activation energy was found to be 0.76 eV. The conductivity of 2.4 × l0-3 S/cm,measured at 300℃ ,was 3 orders of magnitude higher than that of the bulk YSZ.

关 键 词：YSZ/STO/YSZ—STO超晶格多层薄膜 脉冲激光沉积 电导活化能 电导率 

分 类 号：O484.5[理学—固体物理]