锥状TiO_2纳米带制备及光电性质研究  

Preparation and Opto-electronic Properties of Tapered TiO_2 Nanobelts

作　　者：张清林[1] 王小件[1] 王黎明[1] 樊超[1] 夏明霞[2] 潘安练[1] 

机构地区：[1]湖南大学物理与微电子科学学院,微纳结构物理与应用技术湖南省重点实验室,长沙410082 [2]长沙师范学院电子信息工程系,长沙410010

出　　处：《材料导报》2015年第2期1-5,共5页Materials Reports

基　　金：湖南大学青年教师成长计划;湖南省教育厅优秀青年基金(11B012)

摘　　要：采用化学气相沉积法,利用金属钛片为钛源,在金属Pd颗粒的催化下原位生长了锥状TiO2纳米带。扫描电镜（SEM）、XRD和透射电镜（TEM）表征结果表明所制备的锥状TiO2纳米带长度为数十微米,接近基底的底端宽度为1-4μm,顶端形成几十纳米的尖端;此纳米带晶型为金红石结构;锥状TiO2纳米带生长方向是长度方向为[110],横向是[001]方向。对比实验验证了金属Pd颗粒对锥状TiO2纳米带的生长初期起着重要的作用。笔者认为纳米带生长的初期由VLS生长机制决定,而固态Ti原子的扩散对锥状纳米带的形成起着重要的作用。单根TiO2纳米带不同位置的微区拉曼谱均有442cm^-1、604cm^-1两个响应带,分别对应着TiO2金红石相Eg和A1g的拉曼活跃模式。表面光电压谱的研究发现锥状TiO2纳米带具有良好的光电特性,在光催化、光电器件等领域具有潜在应用前景。The tapered TiO2 nanobelts were prepared with chemical vapor deposition（CVD）method,for which the metal Ti foil acted as the Ti source and Pd nanoparticles as the catalyst.Scanning electron microscopy（SEM）,XRD results indicate that the tapered TiO2 nanobelts is rutile with the length of about several tens of micrometers,the width of 1-4μm at the end close to the Ti substrate and several tens of nanometers at the tip.With the transmission electron microscope（TEM）,it was found that the growth direction of the belts was[110]and[001]along length and width direction,respectively.The growth mechanism of the belts at the initial stage was regarded as a vapor-liquidsolid（VLS）growth,while the diffusion of solid Ti atoms from Ti substrate was crucial for the growth of the tapered TiO2 nanobelts.The micro Raman spectra at different positions of the single TiO2 nanobelt showed two response peaks at 442cm^-1,604cm^-1,corresponding to the rutile Eg and A1g Raman active modes,respectively.The surface photovoltage spectroscopy（SPS）demonstrates that the tapered TiO2 nanobelts have good optoelectronic properties,which may be applied to photocatalysis and photoelectronic devices.

关 键 词：锥状TiO2 纳米带 化学气相沉积 表面光电压 微区拉曼 

分 类 号：TB321[一般工业技术—材料科学与工程] O649.4[理学—物理化学]