基于倒扣技术的190～225GHz肖特基二极管高效率二倍频器（英文）  

A 190～225 GHz high efficiency Schottky diode doubler with circuit substrate flip-chip mounted

作　　者：姚常飞[1,2] 周明[2] 罗运生[2] 寇亚男[2] 

机构地区：[1]南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京210016 [2]南京电子器件研究所微波毫米波模块电路事业部,江苏南京210016

出　　处：《红外与毫米波学报》2015年第1期6-9,28,共5页Journal of Infrared and Millimeter Waves

摘　　要：基于分立式GaA s肖特基势垒二极管,研制出了190~225 GHz高效率二倍频器.50μm厚石英电路利用倒扣技术,实现二极管的良好散热、可靠的射频信号及直流地.通过数值分析方法,二极管非线性结采用集总端口模拟,提取二极管的嵌入阻抗,以设计阻抗匹配电路.在202 GHz,测得最高倍频效率为9.6%,当输入驱动功率为85.5 mW时,其输出功率为8.25 mW;在190~225 GHz,测得倍频效率典型值为7.5%;该二倍频器工作频带宽、效率响应曲线平坦,性能达到了国外文献报道的水平.A 190 ~ 225 GHz high multiplying efficiency frequency doubler was developed with discrete Ga As planar Schottky diode. The 50 μm thick quartz circuit substrate is flip-chip m ounted for diode therm al dissipation,as well as RF signals and DC grounding effectively. Diode em bedding im pedances were calculated by full-wave analysis with lum ped port to represent the nonlinear junction for circuit m atching. The doubler is self-biasing and fix-tuned. The highest efficiency of 9. 6% and corresponding output power of 8. 25 m W were obtained at202 GHz with pum ping power of 85. 5 m W. The typical tested efficiency is 7. 5% in 190 ~ 225 GHz. The m ultiplying efficiency features flat and broadband operation. The doubler reaches the state-of-the-art perform ance reported worldwide.

关 键 词：GaAs肖特基二极管 二倍频器 太赫兹 效率 

分 类 号：TN773.2[电子电信—电路与系统]