LPCVD法在制绒单晶硅片衬底上制备ZnO∶B透明导电薄膜及其性能的研究  

Fabrication and Properties of ZnO∶ B Transparent Conductive Films on Textured Monocrystalline Silicon Wafer Substrates by LPCVD Method

作　　者：朱登华[1] 李旺[2,3] 刘石勇[2,3] 牛新伟[2] 杜国平[1] 

机构地区：[1]南昌大学材料科学与工程学院,南昌330031 [2]浙江正泰太阳能科技有限公司,杭州310053 [3]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《人工晶体学报》2015年第1期19-23,37,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61366004);国家高技术研究发展计划(863计划)(2012AA052401)

摘　　要：采用低压化学气相沉积法（LPCVD）在制绒的单晶硅片衬底上制备了B掺杂ZnO（BZO）的透明导电薄膜,研究了B2H6掺杂量、沉积时间对BZO薄膜的微观形貌、导电性能及光学减反性能的影响。结果表明,在制绒单晶硅片衬底上制备的BZO薄膜均呈现＂类金字塔＂的绒面结构,其平均晶粒尺寸在200-500 nm之间,并随B2H6掺杂量增加而减小;BZO薄膜的方阻随沉积时间的增加而呈线性迅速减小的趋势,当沉积时间为420 s时,BZO薄膜的方块电阻低至28Ω/□;在制绒单晶硅片上制备BZO薄膜后,表面平均反射率由15%明显降低至5%左右,表现出优异的光学减反性能。Transparent conductive films of boron-doped zinc（BZO） were grown on textured monocrystalline silicon wafers by a low pressure chemical vapor deposition（LPCVD） method. The influence of B2H6 flow rate and deposition time on the microstructure,conductivity and optical antireflective property of BZO films was investigated. The results show that BZO films grown on the textured wafers show a pyramid-like structure,similar to alkaline textured monocrystalline silicon. The grain size of BZO films range from 200 nm to 500 nm,and it decreases as the B2H6 content increasing. The sheet resistance of BZO films decreases linearly with the deposition time,and reaches a low value of 28 Ω /□with a deposition time of 420 s. More importantly,the reflectivity of the silicon wafer covered with the BZO films is dramatically reduced from 15% to 5%,showing an excellent antireflective performance.Both the low sheet resistance and low reflectivity make LPCVD grown BZO film an alternative front contact for heterojunction with intrinsic thin layer（HIT） solar cells.

关 键 词：低压化学气相沉积 B掺杂ZnO 透明导电薄膜 方块电阻 光学减反 

分 类 号：O484[理学—固体物理]