微带芯片互联失配分析及匹配电路设计  

Analysis of Microstrip-chip Interconnection Dismatch and Design of Its Matching Circuit

作　　者：刘娟[1] 钱兴成[1] 朱臣伟 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2015年第1期67-70,99,共5页Research & Progress of SSE

摘　　要：20GHz以上,当微带衬底材料的介电常数较低（εr=2.2）,而GaAs芯片的介电常数为12.9时,直接用50Ω微带互连会产生较大的反射。对微带芯片互联的失配形式进行了分析和研究,采用在微带与芯片间加一段高阻微带线的方法进行匹配互联,并针对于25-30GHz频率范围对高阻微带线宽度和长度进行仿真和优化。相对于直接互联,匹配互联的插入损耗减小了0.4dB左右,回波损耗减小了9dB以上。最后对直接互联和匹配互联分别进行实物加工装配,测试结果与仿真结果相吻合。As the dielectric constant of GaAs chip is 12.9,its direct bonding through 50Ωmiscrostrip to a low dielectric constant substrate such as 2.2will cause the larger reflection when the frequency is higher than 20 GHz.In this paper,the dismatch reasons of microstrip-chip interconnection have been analyzed.The method of adding a high impedance microstrip between the chip and microstrip as the matching circuit is used.The width and length of this high impedance microstrip are simulated and optimized from 25 GHz to 30 GHz.The simulation results show that with this method the insertion loss decreases about 0.4dB and return loss decreases more than9 dB compared with that of direct interconnection.The matching interconnection and direct interconnection have been employed in manufacturing respectively,and their measurement results are consistent with simulation ones.

关 键 词：引线键合互连 插入损耗 回波损耗 

分 类 号：TN454[电子电信—微电子学与固体电子学]