Si基Er_2O_3薄膜初始生长的原位RHEED和AES研究  

In Situ Study on the Initial Growth of Er_2O_3 Films on Si Substrates by RHEED and AES

作　　者：苑军军 仇庆林 朱燕艳[2] 

机构地区：[1]上海电力学院能源与机械工程学院,上海200090 [2]上海电力学院数理学院,上海200090

出　　处：《微纳电子技术》2015年第2期98-102,共5页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(11305100);上海市自然科学基金资助项目(15ZR1418700)

摘　　要：采用分子束外延(MBE)法在Si(001)衬底上生长Er2O3高k薄膜材料。X射线衍射结果表明,用这一方法得到的硅基Er2O3薄膜是(440)取向的单晶,电学测试预示在Si和Er2O3薄膜的界面有一层很薄的界面层。为了研究Si/Er2O3异质结的界面,通过原位反射式高能电子衍射(RHEED)和俄歇能谱(AES)的方法对Er2O3薄膜在Si衬底上的初始生长情况进行研究。发现在清洁的Si衬底和有SiO2的Si衬底上生长Er2O3薄膜,原位RHEED图谱和AES都有不同的结果,预示着这两种不同的衬底上生长Er2O3薄膜的初始阶段有不同的化学反应。这一现象可能阐释了界面的演变和控制机理。Er2O3 high kfilms were deposited on Si（001）substrates in a molecule beam epitaxy（MBE）system.The X-ray diffraction result shows that the Si based Er2O3 films are single crystalline in the orientation of（440）with the method.The capacity-voltage characteristic tests indicate that a thin interface layer exists between the Si substrate and Er2O3 thin film.In order to investigate the interface of Si/Er2O3 heterojunction,the in situ reflection high energy electron diffraction（RHEED）and Auger electron spectroscopy（AES）were used to study the initial growth of Er2O3 films on clean and oxidized Si（001）substrates.Different results of the in situ RHEED and AES for the films grown on clean and oxidized Si（001）substrates indicate that different chemical reactions exist at the initial growth of Er2O3 thin film on the two types of Si substrates.This phenomenon may indicate the evolution and control mechanism of the interface.

关 键 词：Er2O3 高K材料 界面演变 反射式高能电子衍射(RHEED) 俄歇能谱(AES) 

分 类 号：TN304.21[电子电信—物理电子学] TN304.07