原子层沉积技术制备金属材料的进展与挑战  

Advances and Challenges of Metal Materials Prepared by Atomic Layer Deposition

作　　者：朱琳[1] 李爱东[1] 

机构地区：[1]南京大学现代工程与应用科学学院固体微结构物理国家重点实验室,南京210093

出　　处：《微纳电子技术》2015年第2期113-122,共10页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(51202107);教育部博士点基金资助项目(20120091110049);国家重大科技专项资助项目(2009ZX02039-004)

摘　　要：原子层沉积(ALD)技术是一种三维共形沉积金属薄膜或金属纳米结构的有效手段。简要介绍了ALD技术的基本原理和特点,着重阐述和比较了ALD生长贵金属、过渡金属和活泼金属的不同工艺条件、化学过程和反应生长机理,如贵金属的燃烧反应与成核孕育期、过渡金属铜互连的前驱体与表面平整性以及活泼金属的能量辅助沉积,探讨了前驱体、成核等对金属沉积和质量的重要影响,说明了原位监控手段在生长中的作用。最后简述了ALD沉积金属面临的瓶颈,由于一些重要金属前驱体的匮乏,新的反应路径和生长机理亟待发现,并展望了其未来发展和应用前景。Atomic layer deposition（ALD）is a kind of effective method for three-dimensional conformal deposition of metal thin films and metal nanostructures.The fundamental principles and characteristics of the ALD technology are introduced briefly.The different ALD process conditions,chemical process and reaction growth mechanism of noble metals,transition metals and active metals are emphatically elaborated and compared,such as the noble metal combustion reaction and nucleation incubation,transition metal precursor and surface roughness for copper interconnect,and active metal energy-assisted deposition.The influences of the precursor and nucleation on the metal deposition and quality are discussed.The role of the in-situ monitoring during the ALD growth is illustrated.Finally,the bottleneck of the ALD deposited metal is reviewed.Because of the scarcity of some important metal precursors,the new reaction route and growth mechanism need to be found.The development and application of ALD deposited metals in the future are prospected.

关 键 词：原子层沉积(ALD) 金属薄膜 反应和生长机理 前驱体 成核 

分 类 号：TN304.055[电子电信—物理电子学]