一种具有片上补偿功能的红外读出电路  

An Infrared Readout Circuit with On-chip Compensation

作　　者：阙隆成[1] 吕坚[1] 魏林海[1] 周云[1] 蒋亚东[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《红外技术》2015年第2期101-104,共4页Infrared Technology

基　　金：国家自然科学基金;编号:61421002

摘　　要：针对非制冷红外探测器系统,提出了一种恒流偏置的红外读出电路(ROIC),该电路具有衬底温度补偿功能,且可实现片上偏移非均匀性补偿。基于微测辐射热计等效电阻受目标温度、衬底温度等影响的等效模型,每个读出通道采用两个盲电阻以消除衬底温度的影响,同时使用DAC逐点调节参考电压,以完成片上偏移非均匀性补偿。该ROIC应用到阵列大小为320×240的非制冷微测辐射热计焦平面上,已在CSMC 05MIXDDST02的0.5μm CMOS标准工艺下成功流试验片。电路测试结果表明:对于常温目标,当衬底温度变化60 K时,输出电压变化小于500 mV;经偏移非均匀性补偿后,阵列的固定图像噪声为11.8 mV。该ROIC适用于应用于复杂温度环境的高均匀性非制冷红外探测器。This paper describes a constant current-biased readout circuit with substrate temperature compensation and non-uniformity compensation for the uncooled micro-bolometer detector. The influence of temperature for the equivalent resistance of micro-bolometer is evaluated. Then an effective way for substrate temperature compensation is proposed, which utilizes two blind micro-bolometers in each readout circuit channel. On the other hand, the non-uniformity compensation is also achieved by a 5 bits on-chip DAC. A 320×240 uncooled micro-bolometer focal plane array（FPA）based on the proposed circuit was implemented on silicon by 0.5 μm CMOS technology. The measurement data show that the maximum difference of a normal temperature object over 60 K substrate of which temperature change is only 500 mV and the fixed pattern noise（FPN）is less than 11.8 mV. Thus it is ideally suited for high performance production applications.

关 键 词：微测辐射热计 读出电路 衬底温度补偿 非均匀性补偿 

分 类 号：TN432[电子电信—微电子学与固体电子学]