压应变Ge/(001)Si_(1-x)Ge_x空穴散射与迁移率模型  

Hole scattering and mobility in compressively strained Ge/(001)Si_(1-x)Ge_x

作　　者：白敏[1] 宣荣喜[1] 宋建军[1] 张鹤鸣[1] 胡辉勇[1] 舒斌[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安710071

出　　处：《物理学报》2015年第3期477-482,共6页Acta Physica Sinica

基　　金：教育部博士点基金(批准号:JY0300122503);陕西省自然科学基础研究计(批准号:2014JQ8329)资助的课题~~

摘　　要：应变Ge材料因其载流子迁移率高,且与硅工艺兼容等优点,已成为硅基CMOS研究发展的重点和热点.本文基于压应变Ge/(001)Si1-xGex价带结构模型,研究了压应变Ge/(001)Si1-xGex空穴各散射概率、空穴迁移率与Ge组分(x)的关系,包括空穴离化杂质散射概率、声学声子散射、非极性光学声子散射、总散射概率以及空穴各向同性、各向异性迁移率,获得了有实用价值的相关结论.本文量化模型可为应力致Ge改性半导体物理的理解及相关器件的研究设计提供有重要的理论参考.Strained Ge attracts attention of researchers for its high mobility and compatibility with Si technology. Based on the valence band model for compressively strained Ge/（001）Si1-xGex, the relationships between hole scattering, mobility,and Ge content（x） are established in this paper, including ionized impurity, acoustic phonon, non-polar optical phonon,total scattering rates, and the averaged and directional mobility of holes. Our quantitative data gained within the models can provide valuable references for the research of modified Ge materials physics and the design of the related devices.

关 键 词：锗 应变 散射 迁移率 

分 类 号：O422.5[理学—声学]