ECR等离子体刻蚀增强机械抛光CVD金刚石  

Polishing Diamond Coatingsby Combination of Electron Cyclotron Resonance Plasma Etching and Mechanical Polishing

作　　者：潘鑫[1] 马志斌[1] 高攀[1] 李国伟[1] 曹为[1] 

机构地区：[1]武汉工程大学材料科学与工程学院湖北省等离子体化学与新材料重点实验室,武汉430073

出　　处：《真空科学与技术学报》2015年第2期174-178,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金资助项目(10875093)

摘　　要：采用电子回旋共振(ECR)等离子体刻蚀与机械抛光相结合的方法抛光化学气相沉积(CVD)金刚石,运用扫描电镜、Raman光谱观察、分析了刻蚀与抛光后金刚石的表面形貌和质量变化,并与单纯的机械抛光相比较,研究了等离子体刻蚀对后续机械抛光的影响,结果发现:金刚石经ECR等离子体刻蚀后非晶碳含量有一定程度降低,刻蚀过程在金刚石晶面形成的疏松表面有利于机械抛光,金刚石表面平均粗糙度更加快速降低。对比实验表明等离子体刻蚀对机械抛光前期的抛光效率的增强效果更为明显,在ECR等离子体刻蚀后的金刚石样品经10min机械抛光后粗糙度从7.284下降到1.054μm,而直接机械抛光30min时金刚石的表面粗糙度为1.133μm,在机械抛光的初始阶段,等离子体刻蚀后的机械抛光效率是单纯机械抛光效率的3倍。最终,经过三次重复刻蚀后机械抛光,金刚石表面粗糙度降为0.045μm。The diamond coatings,synthesized by chemical vapor deposition,were polished by a combination of electron cyclotron resonance（ECR）plasma etching and mechanical polishing.The diamond coatings,before and after polishing cycles,were characterized with scanning electron microscopy and Raman spectroscopy.The impact of the cycle of plasma etching and mechanical polishing on the microstructures were investigated.The results show that the newly-developed technique significantly reduced its surface roughness possibly because much of the non-diamond phased carbon was etched away.For example,mechanical polishing for 10 min decreased the roughness of the plasma etched diamond coatings from 7.284 to 1.054μm,whereas mechanical polishing for 30 min reduced the roughness of the control sample from 7.284 to 1.133μm.Moreover,in the initial polishing stage,the polishing rate of the etched surfaces was 3times higher than that of the un-etched one;and 3polishing cycles decreased the surface roughness down to 0.045μm.

关 键 词：刻蚀 机械抛光 电子回旋共振等离子体 化学气相沉积金刚石 

分 类 号：O531[理学—等离子体物理]