CMOS低相位噪声压控振荡器的设计  

Design of a CMOS LC-VCO with Low Phase Noise

作　　者：薛兵 高博 路小龙 龚敏 陈昶 

机构地区：[1]四川省微电子技术重点实验室,成都610064

出　　处：《微电子学》2015年第1期23-25,31,共4页Microelectronics

摘　　要：基于65nm CMOS标准工艺库,设计了一个工作频率在10GHz的具有低相位噪声的CMOS电感电容型压控振荡器。该压控振荡器选用CMOS互补交叉耦合型电路结构,采用威尔逊型尾电流源负反馈技术来降低相位噪声。仿真结果表明,此压控振荡器工作频率覆盖范围为9.9~11.2GHz,调谐范围为12.3%,中心频率为10.5GHz,在频率偏移中心频率1MHz下的相位噪声为-113.3dBc/Hz,核心功耗为2.25mW。A 10 GHz inductance and capacitance voltage controlled oscillator with low phase noise was presented based on 65 nm standard CMOS process.In this LC-VCO circuit,a CMOS complementary cross couple structure was utilized,and a negative feedback Wilson current source was used to reduce the phase noise.The simulation results indicated that the VCO had a frequency range of 9.9-11.2 GHz,whose tuning range was about 12.3%,which had a phase noise of-113.3dBc/Hz at 1 MHz offset from the center frequency 10.5GHz carrier,and its core power consumption was 2.25 mW.

关 键 词：VCO 相位噪声 Q值 负反馈 

分 类 号：TN453[电子电信—微电子学与固体电子学]