等离子体刻蚀工艺模型研究进展  

Review of Modeling in Plasma Etching Process

作　　者：于骁[1] 周再发[1] 李伟华[1] 黄庆安[1] 

机构地区：[1]东南大学MEMS教育部重点实验室,南京210096

出　　处：《微电子学》2015年第1期94-99,共6页Microelectronics

基　　金：国家科技重大专项(2011ZX02507)

摘　　要：综述了等离子体刻蚀模型的研究进展,包括粒子方法模型和动力学模型的现状与进展。粒子方法模型主要介绍蒙特卡洛模型和结合蒙特卡洛模型的混合模型,动力学模型主要介绍反应位点模型、分子动力学模型和混合层动力学模型。在每种模型中,讨论了该模型的优缺点及应用范围。在此基础上,总结了过去刻蚀模型的发展历程,展望了等离子刻蚀模型的发展前景,对进行等离子刻蚀的建模分析具有参考意义。Latest development of modeling in plasma etching was summarized,including the particle model and the kinetics model.The Monte Carlo model and hybrid model had been introduced as the particle method,and the reactive site model,molecular dynamics model and mixing layer model had been introduced as the kinetics model.The advantages,the disadvantages and the applications of the mentioned models were reviewed.The development history and prospect of modeling in plasma etching was discussed.It has reference significance to the modeling in plasma etching.

关 键 词：等离子体刻蚀 刻蚀模型 粒子方法 动力学方法 工艺模拟 

分 类 号：TN405[电子电信—微电子学与固体电子学]