IGBT模块窄脉冲解决方案  

The Solution of IGBT Narrow-pulse

作　　者：陶灿辉[1] 吴文婷[1] 徐萌萌[1] 丁力[1] 

机构地区：[1]中国船舶科学研究中心,江苏无锡214000

出　　处：《电力电子技术》2015年第2期47-48,共2页Power Electronics

摘　　要：绝缘栅双极晶体管(IGBT)模块在运行过程中,若出现窄脉冲,会对IGBT造成较大影响,甚至损坏。主要是因为内部IGBT或体二极管单元在未完全开通情况下又重新关断,这一过程产生的di/dt要比正常完全开通再关断的情况大很多,从而对于IGBT单元会产生很大的关断电压尖峰,而对于体二极管单元而言,会产生很大的du/dt和振荡。在此以模块FF1000R17IP4为例,分析了出现窄脉冲的原因,然后给出了限制窄脉冲的方法。If a narrow-pulse appears when the IGBT module is running,the module must be impacted,or even damaged.It is mainly because the IGBT or the body diode cut off again before they are completely open.During this process,the value of di/dt is much more than it under the condition that the IGBT or the body diode cut off again after they are completely open.While for the body diode,it will have a great du/dt and oscillation.Based on the module of FF1000R17IP4,from Infineon company,the reason of narrow-pulse is proposed,and a way to limit narrow-pulse is presented.

关 键 词：绝缘栅双极晶体管 窄脉冲 脉宽调制 

分 类 号：TN8[电子电信—信息与通信工程]