用于红外焦平面阵列的等效像元电路设计  

Design of equivalent pixel circuit for infrared focal plane array

作　　者：戴山彪 陈力颖[1] 邢海英[1] 王健[1] 杨晓龙[1] 

机构地区：[1]天津工业大学电子与信息工程学院,天津300387

出　　处：《激光与红外》2015年第2期171-175,共5页Laser & Infrared

基　　金：国家自然科学基金项目(No.61204008)资助

摘　　要：提出了一种用于300×400红外焦平面阵列读出电路的等效像元电路结构。该电路与氧化钒（VOx薄膜）制成的微机械系统（MEMS）的电特性等效,并能够模拟MEMS像元改变时支路电流的变化。红外面阵探测器读出电路在流片后,生长MEMS物理结构（VOx薄膜）前,该等效像元电路结构用于读出电路的电性能测试,从而剔除不良品,减少封装成本。该电路采用了Global Foundry 0.35μm工艺设计并流片。测试结果表明,当积分电流为0-200nA时,该等效像元电路的电性能与MEMS像元一致。An equivalent pixel circuit for 300 × 400 infrared focal plane array readout circuit structure is presented in this paper. The circuit＇s electrical characteristics are equivalent to that of the vanadium oxide（ VOxfilm） micro-mechanical systems（ MEMS）. It can simulate the variation of the branch current when the MEMS pixel changes. Before the growth of physical structure of MEMS（ VOxfilm）,the infrared array detector readout circuit has been fabricated. The equivalent pixel circuit is designed to test the electrical properties of the readout circuit. It can remove the defective products and reduce packaging costs. The circuit has been designed and fabricated with a Global Foundry 0. 35μm process. The test results indicate that the equivalent circuit has the same electrical properties as the MEMS pixel when the integrating current is 0 - 200nA.

关 键 词：红外焦平面阵列 读出电路 微机械系统 等效像元电路 

分 类 号：TN432[电子电信—微电子学与固体电子学]