基于MEMS技术的新型太赫兹混频器设计与制作  

Design and Fabrication of a Sub-Millimeter Mixer Based on MEMS Technology

作　　者：李建华[1] 徐立新[1] 陈和峰 王凤芹 付博 

机构地区：[1]北京理工大学机电动态控制重点实验室,北京100081 [2]淮海工业集团有限公司MEMS中心,山西长治046012

出　　处：《传感技术学报》2015年第1期9-12,共4页Chinese Journal of Sensors and Actuators

摘　　要：混频器是太赫兹器件中传输信号的基本元件,具有重要的研究价值。介绍了一种以MEMS工艺为基础的新型的太赫兹混频器设计和加工工艺。该太赫兹混频器采用具有高介电常数SU-8光刻胶作为介质层,然后在SU-8胶介质层上进行光刻、电镀微带线,实现了采用正负胶结合的牺牲层工艺加工制作出了太赫兹混频器。Mixer is a basic RF device for signal transportation and has potential applications in many fields. A novel sub-millimeter mixer device based on MEMS technology has been designed and fabricated. In this design,SU-8 photoresist which has a high dielectric constant,was used as the dielectric layer of the device. The subsequent processes,such as photolithography,electroplating of micro-strip etc.,were carried out on SU-8 dielectric layer. By using positive- and negative photoresist sacrifical process,a novel sub-millimeter mixer was demonstrated.

关 键 词：混频器 太赫兹 MEMS 微带线 牺牲层工艺 

分 类 号：TN384[电子电信—物理电子学]