Molecular dynamics study on splitting of hydrogen-implanted silicon in Smart-Cut~ technology  

作　　者：王冰 古斌 潘荣莹 张思佳 沈建华 

机构地区：[1]Key Laboratory of Testing Technology for Manufacturing Process, Southwest University of Science and Technology-Ministry of Education, School of Manufacturing Science and Engineering, Southwest University of Science and Technology

出　　处：《Journal of Semiconductors》2015年第3期144-149,共6页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.11372261);the Excellent Young Scientists Supporting Project of Science and Technology Department of Sichuan Province(No.2013JQ0030);the Supporting Project of Department of Education of Sichuan Province(No.2014zd3132);the Opening Project of Key Laboratory of Testing Technology for Manufacturing Process,Southwest University of Science and Technology-Ministry of Education(No.12zxzk02);the Fund of Doctoral Research of Southwest University of Science and Technology(No.12zx7106);the Postgraduate Innovation Fund Project of Southwest University of Science and Technology(No.14ycxjj0121)

摘　　要：Defect evolution in a single crystal silicon which is implanted with hydrogen atoms and then annealed is investigated in the present paper by means of molecular dynamics simulation. By introducing defect density based on statistical average, this work aims to quantitatively examine defect nucleation and growth at nanoscale during annealing in Smart-Cut technology. Research focus is put on the effects of the implantation energy, hydrogen implantation dose and annealing temperature on defect density in the statistical region. It is found that most de- fects nucleate and grow at the annealing stage, and that defect density increases with the increase of the annealing temperature and the decrease of the hydrogen implantation dose. In addition, the enhancement and the impediment effects of stress field on defect density in the annealing process are discussed.Defect evolution in a single crystal silicon which is implanted with hydrogen atoms and then annealed is investigated in the present paper by means of molecular dynamics simulation. By introducing defect density based on statistical average, this work aims to quantitatively examine defect nucleation and growth at nanoscale during annealing in Smart-Cut technology. Research focus is put on the effects of the implantation energy, hydrogen implantation dose and annealing temperature on defect density in the statistical region. It is found that most de- fects nucleate and grow at the annealing stage, and that defect density increases with the increase of the annealing temperature and the decrease of the hydrogen implantation dose. In addition, the enhancement and the impediment effects of stress field on defect density in the annealing process are discussed.

关 键 词：SMART-CUT molecular dynamics hydrogen implantation defect density 

分 类 号：TN305.3[电子电信—物理电子学]