云南高校图书馆联盟文献共享服务平台- SMART-CUT

SMART-CUT: 作品数：10被引量：11H指数：3; 导出分析报告; 相关领域：电子电信一般工业技术更多>>; 相关作者：林成鲁陈庆川耿漫许泽金童洪辉更多>>; 相关机构：中国科学院上海冶金研究所中国科学院中国核工业集团公司上海理工大学更多>>; 相关期刊：《Acta Mechanica Solida Sinica》《功能材料与器件学报》《Journal of Semiconductors》《电子科技》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划更多>>

Molecular Dynamics Simulation on Hydrogen Ion Implantation Process in Smart-Cut Technology被引量：3: 《Acta Mechanica Solida Sinica》2016年第2期111-119,共9页Bing Wang Bin Gu Hongbin Zhang Xiqiao Feng; Project supported by the National Natural Science Foundation of China(No.11372261);the Excellent Young Scientists Supporting Project of Science and Technology Department of Sichuan Province(No.2013JQ0030);the Supporting Project of Department of Education of Sichuan Province(No.2014zd3132);the Opening Project of Key Laboratory of Testing Technology for Manufacturing Process,Southwest University of Science and Technology-Ministry of Education(No.12zxzk02);the Fund of Doctoral Research of Southwest University of Science and Technology(No.12zx7106);the Postgraduate Innovation Fund Project of Southwest University of Science and Technology(No.14ycxjj0121); The hydrogen ion implantation process in Smart-Cut technology is investigated in the present paper using molecular dynamics（MD） simulations.This work focuses on the effects of the implantation energy,dose of hydroge...; 关键词：Smart-Cut technology ion implantation molecular dynamics defect rate

Smart-cut方法制备GeOI材料的Ge表面腐蚀研究: 《电子科技》2015年第6期205-207,212,共4页邓海量杨帆张轩雄; 通过H离子注入Ge晶圆退火起泡动力学研究,对实现晶圆Ge在氧化硅上层转移后的Ge表面(Ge OI)采用湿法化学腐蚀研究,使其能进一步改善表面质量(即粗糙度),同时去除由于H离子注入Ge所造成的表面非晶层。通过氨水、H2O2、去离子水混合溶液在...; 关键词：Smart-cut技术 Ge表面粗糙度表面腐蚀

Molecular dynamics study on splitting of hydrogen-implanted silicon in Smart-Cut~ technology被引量：1: 《Journal of Semiconductors》2015年第3期144-149,共6页王冰古斌潘荣莹张思佳沈建华; Project supported by the National Natural Science Foundation of China(No.11372261);the Excellent Young Scientists Supporting Project of Science and Technology Department of Sichuan Province(No.2013JQ0030);the Supporting Project of Department of Education of Sichuan Province(No.2014zd3132);the Opening Project of Key Laboratory of Testing Technology for Manufacturing Process,Southwest University of Science and Technology-Ministry of Education(No.12zxzk02);the Fund of Doctoral Research of Southwest University of Science and Technology(No.12zx7106);the Postgraduate Innovation Fund Project of Southwest University of Science and Technology(No.14ycxjj0121); Defect evolution in a single crystal silicon which is implanted with hydrogen atoms and then annealed is investigated in the present paper by means of molecular dynamics simulation. By introducing defect density based...; 关键词：SMART-CUT molecular dynamics hydrogen implantation defect density

Fracture mechanics analysis on Smart-Cut~technology.Part 2:Effect of bonding flaws被引量：1: 《Acta Mechanica Sinica》2009年第2期197-203,共7页Bin Gu Hongyuan Liu Yiu-Wing Mai Xi Qiao Feng ShouWen Yu; supported by the Australian Research Council (ARC), the National Natural Science Foundation of China (10525210 and 10732050); 973 Project (2004CB619303); In Part 2 of the paper on the Smart-Cut process, the effects of bonding flaws characterized by the size and internal pressure before and after splitting are studied by using fracture mechanics models. It is found that...; 关键词：Smart-Cut technology Fracture mechanics Stress intensity factor Interfacial defect

Fracture mechanics analysis on Smart-Cut~ technology.Part 1:Effects of stiffening wafer and defect interaction被引量：3: 《Acta Mechanica Sinica》2009年第1期73-81,共9页Bin Gu Hongyuan Liu Yiu-Wing Mai Xi Qiao Feng Shou Wen Yu; the Australian Research Council (ARC),the National Natural Science Foundation of China (10525210 and 10732050); 973 Project (2004CB619303); In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut process, a recently established ion cut technology which enables highly efficient fabrication of various silicon-on-insulator （SOI）...; 关键词：Smart-Cut technology Silicon-on-insulatorwafer Crack growth Fracture mechanics Stress intensityfactor

用smart-cut方法制备GOI材料及研究被引量：1: 《功能材料与器件学报》2007年第3期207-212,共6页詹达马小波刘卫丽朱鸣宋志棠; 研究了氢离子注入后锗表面的剥离情况,观察发现其表面剥离的情况与Si相比有明显不同,H+注入后形成的微气泡层并没有导致Ge表面形成类似砂眼的凹坑,而是整个表层薄膜受H+膨胀压力导致其全部脱落。利用特殊的Ge的清洗工艺,完成了注H+的Ge...; 关键词：GOI smart—cut 键合

Single Crystal Si Layers on Glass Fabricated by Hydrophilic Fusion Bonding and Smart-Cut Technology: 《Chinese Physics Letters》2004年第12期2540-2542,共3页甄万宝刘卫丽宋志棠封松林朱世富赵北君

Fabrication of thick BOX SOI by Smart-cut technology: 《Nuclear Science and Techniques》2003年第2期115-118,共4页WU Yan-Jun, ZHANG Miao, AN Zheng-Hua, LIN Cheng-Lu(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,the Chinese Academy of Sciences, Shanghai 200050); Supported by the National Natural Science Foundation of China(No.69906005)and the Shanghai Youth Foundation(No.01 QMH1403); A SOI material with thick BOX (2.2 μm) was successfully fabricated using the Smart-cut technology. The thick BOX SOI microstructures were investigated by high resolution cross-sectional transmission electron microsco...; 关键词：灵活切割技术微观结构截面透射电子显微镜 XTEM 电学特性绝缘硅片 SOI

等离子体基离子注入法制备SOI材料被引量：1: 《功能材料》2002年第4期347-349,353,共4页于伟东王曦陈静张苗; 国家自然科学基金资助项目 (5992 52 0 5) ;上海市学科带头人资助项目 (99XD1 4 0 2 9); 注氧隔离法 (SIMOX)和体硅智能剥离法 (smart cut)是目前制备绝缘体上的硅 (SOI)材料的最重要的两种方法。而离子注入是其中最主要工艺过程。本文简述了等离子体基离子注入 (PBII)在制备SOI的两种方法中应用的国内外研究现状。讨论了两...; 关键词：等离子体基离子注入 SOI材料 PBII SIMOX SMART-CUT

SOI技术的新进展被引量：4: 《功能材料与器件学报》2001年第1期1-6,共6页林成鲁; 通过对最近两次 SOI国际会议的分析，了 SOI技术取得的新。三种 SOI技术 SIMOX， Smart－ cut和 BESOI已走向商业化 ,在高温与辐射环境下工作的 SOI电路也走向了市场。近来人们更加重视 SOI技术，是因为 SOI在实现低压、低功耗电路上...; 关键词：SIMOX SMART-CUT 低压低功耗电路 SOI技术

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