Fabrication of thick BOX SOI by Smart-cut technology  

作　　者：WU Yan-Jun, ZHANG Miao, AN Zheng-Hua, LIN Cheng-Lu(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,the Chinese Academy of Sciences, Shanghai 200050) 

出　　处：《Nuclear Science and Techniques》2003年第2期115-118,共4页核技术（英文）

基　　金：Supported by the National Natural Science Foundation of China(No.69906005)and the Shanghai Youth Foundation(No.01 QMH1403)

摘　　要：A SOI material with thick BOX (2.2 μm) was successfully fabricated using the Smart-cut technology. The thick BOX SOI microstructures were investigated by high resolution cross-sectional transmission electron microscopy (XTEM), while the electrical properties were studied by the spreading resistance profile (SRP). Experimental results demonstrate that both structural and electrical properties of the SOI structure are very good.A SOI material with thick BOX (2.2 μm) was successfully fabricated using the Smart-cut technology. The thick BOX SOI microstructures were investigated by high resolution cross-sectional transmission electron mi-croscopy (XTEM), while the electrical properties were studied by the spreading resistance profile (SRP). Experimen-tal results demonstrate that both structural and electrical properties of the SOI structure are very good.

关 键 词：灵活切割技术 微观结构 截面透射电子显微镜 XTEM 电学特性 绝缘硅片 SOI 

分 类 号：TN304.05[电子电信—物理电子学]