SOI技术的新进展  

New progress in SOI technology

作　　者：林成鲁[1] 

机构地区：[1]中国科学院上海冶金研究所,上海200050

出　　处：《功能材料与器件学报》2001年第1期1-6,共6页Journal of Functional Materials and Devices

摘　　要：通过对最近两次 SOI国际会议的分析，了 SOI技术取得的新。三种 SOI技术 SIMOX， Smart－ cut和 BESOI已走向商业化 ,在高温与辐射环境下工作的 SOI电路也走向了市场。 近来人们更加重视 SOI技术，是因为 SOI在实现低压、低功耗电路上的突出优越性。The new progress at the Silicon－ On－ Insulator (SOI) technology is reviewed, according to the analysis of the recent two SOI international conferences. Three techniques, SIMOX, Smart－ cut and BESOI,become very successful and commercially in producing SOI material. SOI devices have been used in several market applications such as high temperature and radiation hard integrated circuits. Recent－ ly much attention has been paid to SOI technology, because the most prominent advantage of SOI circuits is its ability to realize low voltage/low power.

关 键 词：SIMOX SMART-CUT 低压低功耗电路 SOI技术 

分 类 号：TN304.05[电子电信—物理电子学]