Monte-Carlo simulation studies of the effect of temperature and diameter variation on spin transport in Ⅱ–Ⅵ semiconductor nanowires  

作　　者：Sabiq Chishti Bahniman Ghosh Bhupesh Bishnoi 

机构地区：[1]Department of Electrical Engineering,Indian Institute of Technology Kanpur [2]Microelectronics Research Center, 10100 Burnet Road, University of Texas at Austin

出　　处：《Journal of Semiconductors》2015年第2期1-1,2-5,共5页半导体学报（英文版）

摘　　要：We have analyzed the spin transport behaviour of four II-VI semiconductor nanowires by simulating spin polarized transport using a semi-classical Monte-Carlo approach. The different scattering mechanisms con- sidered are acoustic phonon scattering, surface roughness scattering, polar optical phonon scattering, and spin flip scattering. The II-VI materials used in our study are CdS, CdSe, ZnO and ZnS. The spin transport behaviour is first studied by varying the temperature （4-500 K） at a fixed diameter of 10 nm and also by varying the diameter （8-12 nm） at a fixed temperature of 300 K. For II-VI compounds, the dominant mechanism is for spin relaxation; D＇yakonovPerel and Elliot Yafet have been actively employed in the first order model to simulate the spin transport. The dependence of the spin relaxation length （SRL） on the diameter and temperature has been analyzed.We have analyzed the spin transport behaviour of four II-VI semiconductor nanowires by simulating spin polarized transport using a semi-classical Monte-Carlo approach. The different scattering mechanisms con- sidered are acoustic phonon scattering, surface roughness scattering, polar optical phonon scattering, and spin flip scattering. The II-VI materials used in our study are CdS, CdSe, ZnO and ZnS. The spin transport behaviour is first studied by varying the temperature （4-500 K） at a fixed diameter of 10 nm and also by varying the diameter （8-12 nm） at a fixed temperature of 300 K. For II-VI compounds, the dominant mechanism is for spin relaxation; D＇yakonovPerel and Elliot Yafet have been actively employed in the first order model to simulate the spin transport. The dependence of the spin relaxation length （SRL） on the diameter and temperature has been analyzed.

关 键 词：SPINTRONICS spin transport II-VI nanowire spin relaxation lengths Monte Carlo method 

分 类 号：O471[理学—半导体物理]