A transmission line-type electrical model for tapered TSV considering MOS effect and frequency-dependent behavior  

作　　者：刘松 单光宝 谢成民 杜欣荣 

机构地区：[1]Department of Postgraduates, Xian Microelectronics Technology Research Institute

出　　处：《Journal of Semiconductors》2015年第2期92-98,共7页半导体学报（英文版）

基　　金：Project supported by the National Defense Basic Scientific Research Program of China(No.A0320132012)

摘　　要：The analytical model of voltage-controlled MOS capacitance of tapered through silicon via （TSV） is derived. To capture the frequency-dependent behavior of tapered TSV, the conventional analytical equations of RLCG for two-wire transmission lines are revised. With the adoption of MOS capacitance model and the revised RLCG analytical equations, a transmission line-type electrical model for tapered TSV is proposed finally. All the proposed models are validated by simulation tools, and a good correlation is obtained between the proposed models and simulations up to 100 GHz. With the proposed model, both the semiconductor phenomenon and frequency- dependent behavior of tapered TSV can be fully captured at high frequency, and the performance of tapered TSV can be evaluated accurately and conveniently prior to 3D IC design.The analytical model of voltage-controlled MOS capacitance of tapered through silicon via （TSV） is derived. To capture the frequency-dependent behavior of tapered TSV, the conventional analytical equations of RLCG for two-wire transmission lines are revised. With the adoption of MOS capacitance model and the revised RLCG analytical equations, a transmission line-type electrical model for tapered TSV is proposed finally. All the proposed models are validated by simulation tools, and a good correlation is obtained between the proposed models and simulations up to 100 GHz. With the proposed model, both the semiconductor phenomenon and frequency- dependent behavior of tapered TSV can be fully captured at high frequency, and the performance of tapered TSV can be evaluated accurately and conveniently prior to 3D IC design.

关 键 词：3D IC TSV TSV electrical model MOS effect transmission line 

分 类 号：TN386[电子电信—物理电子学]