钛酸钡陶瓷基片的双面研抛加工研究  

Double-sided lapping and polishing on BaTiO_3 ceramic substrate

作　　者：李国明[1] 阎秋生[1] 潘继生[1] 

机构地区：[1]广东工业大学机电工程学院,广州510006

出　　处：《金刚石与磨料磨具工程》2015年第1期11-16,共6页Diamond & Abrasives Engineering

基　　金：国家自然科学基金资助项目(51305082)

摘　　要：采用氧化铝磨料对钛酸钡(BaTiO3)陶瓷基片进行双面研磨加工,分析磨料粒径、研磨压力、研磨盘转速、磨料浓度以及研磨液流量等研磨工艺参数对基片表面粗糙度和材料去除率的影响。采用双面研磨工艺,依次用W14、W7、W5的氧化铝磨料对钛酸钡陶瓷基片(原始粗糙度Ra0.219μm)在研磨压力3.26kPa、研磨盘转速为37r/min、磨料质量浓度为9%、研磨液流量10mL/min的研磨参数下,进行粗研、半精研、精研,取得了表面粗糙度Ra0.076 6μm的研磨片。对研磨片继续用W0.2SiO2抛光可获得表面粗糙度Ra为6nm的超光滑表面。同时,用激光共聚焦显微镜和扫描电镜观察了不同加工阶段的基片表面形貌,并分析了材料去除机理;采用氧化铝磨料的研磨过程中,材料以脆性断裂去除为主;采用SiO2磨料抛光过程中,工件材料以塑性去除为主。BaTiO3 ceramic substrate was machined by double-sided lapping, and the influence of process parameters on the surface roughness （Ra） and material removal rate （MRR） were studied. Al2O3, whose particle size were W14, W7 and W5, were used to grind, pre-lap and lap BaTiO3 substrate at pressure of 3.26 kPa and rotation speed 37 r/min by double side lapping. The concentration of abrasive was 90//00 and grinding fluid flow was 10 mL/min. The substrate was ground from Ra 0. 219 μm to Ra 0.076 6 μm. If ground with W0.2 SiO2, there would be an ultra-smooth surface of Ra 6 nm. The topography of the machined substrate surface was observed by laser confocal microscopy and SEM. The material removal mechanism was discussed. It was found that the fragile mode played a dominant role in the lapping process, while plastic removal mode played a dominant role in the polishing process. Key words BaTiO3 ceramics; double-sided lapping; polishing; material removal mechanism ; surface roughness; surface topography

关 键 词：钛酸钡陶瓷 双面研磨 抛光 去除机理 表面粗糙度 表面形貌 

分 类 号：TG74[金属学及工艺—刀具与模具]