1.3μm GaAsSb/GaAs单量子阱垂直腔面发射激光器的仿真研究  

The Simulation of 1.3 μm GaAsSb/GaAs Single Quantum Well Vertical Cavity Surface Emitting Laser

作　　者：何斌太 刘国军[1] 魏志鹏[1] 安宁[1] 刘鹏程[1] 刘超[1] 王旭[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,长春130022

出　　处：《长春理工大学学报（自然科学版）》2014年第6期1-4,共4页Journal of Changchun University of Science and Technology(Natural Science Edition)

基　　金：国家自然科学基金资助项目(61006039;61370043);高功率半导体激光国家重点实验室基金(9140C310101120C031115)

摘　　要：设计了用于提高1.3μm GaAsSb/GaAs单量子阱激光器光反馈的分布布拉格反射镜。基于PICS3D软件建立了单量子阱垂直腔面发射激光器仿真模型,并对有源区量子阱的材料组分和阱宽进行了优化分析。结果表明,量子阱组分为GaAs0.64Sb0.36/GaAs、阱宽为7nm时,器件的阈值电流为0.8m A,斜率效率为0.017W/A。当输入电流为8m A时,输出功率达到0.12m W。The distributed bragg reflectors of 1.3μm GaAsSb/GaAs single quantum well vertical cavity surface emitting laser are designed and used for developing the optical feedback.The simulation model of single quantum well vertical cavity surface emitting laser which is based on PICS3 D software is established and the material composition and the well width are optimally analyzed.The results show that when the material composition is GaAs0.64Sb0.36/GaAs and the well width is 7nm,the threshold current is 0.8m A and the slope efficiency is 0.017W/A.The output optical power is0.12 m W under the input current 8m A.

关 键 词：GaAsSb/GaAs 量子阱 垂直腔面发射激光器 阈值电流 斜率效率 

分 类 号：TN365[电子电信—物理电子学]