背景电荷对两点量子元胞自动机电路的影响  

Effect of Stray Charge on the Circuit of 2-Dot Quantum Cellular Automata

作　　者：汪志春[1] 蔡理[1] 杨晓阔[1] 张明亮[1] 

机构地区：[1]空军工程大学理学院,西安710051

出　　处：《微纳电子技术》2015年第3期137-141,共5页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(61172043);陕西省自然科学基础研究计划重点项目(2011JZ015)

摘　　要：背景电荷是影响两点量子元胞自动机电路可靠性的一个重要因素。为了量化分析不同区域内背景电荷对两点量子元胞自动机信息正确传输概率的影响,建立了两点量子元胞自动机状态转换的概率模型,求解出目标元胞在背景电荷影响下发生翻转的概率。研究结果表明,以元胞尺寸和间距均取20 nm为例,信号沿水平方向传输时,背景电荷在离目标元胞40 nm范围内将导致元胞错误翻转;信号沿竖直方向传输时,背景电荷在离目标元胞32 nm范围内将导致元胞错误翻转。背景电荷对目标元胞输出状态的影响范围随电路中元胞间距的增大而增大,而与元胞尺寸无关。The stray charge is an important factor to influence the reliability of the circuit for 2- dot quantum cellular automata. In order to quantitatively analyze the effects of the stray charges in different areas on the correct transfer probability of the signal for 2-dot quantum cellular au- tomata, the probability model of the state transition for 2-dot quantum cellular automata was es- tablished, and the turning probability of the target cell affected by the stray charge was solved. The results show that when the size and distance of the cells are both 20 nm, the stray charge is in the range of 40 nm from the target cell in case of the signal propagation along the horizontal di- rection and in the range of 32 nm from the target cell in case of the signal propagation along the vertical direction, all of which lead to false turning of cells. The influence range of the stray charge on the output state of the target cell increases with the increase of the distance of the cells, and has nothing with the size of the cells.

关 键 词：两点量子元胞自动机 背景电荷 传输线 反相器 概率模型 

分 类 号：O471.1[理学—半导体物理] TN4[理学—物理]