宽光谱窄带隙微晶硅锗太阳电池研究  

Study of microcrystalline silicon-germanium solar cell with wide-spectrum and narrow-bandgap

作　　者：刘群[1] 倪牮[1] 张建军[1] 马峻[1] 王昊[1] 赵颖[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所,光电信息技术科学教育部重点实验室,光电子薄膜器件与技术天津市重点实验室,天津300071

出　　处：《中国科技论文》2015年第4期429-432,共4页China Sciencepaper

基　　金：国家重点基础研究发展计划(973计划)资助项目(2011CBA00705,2011CBA00706,2011CBA00707);高等学校博士学科点专项科研基金资助项目(20120031120044);天津市应用基础及前沿技术研究计划资助项目(12JCQNJC01000);国家自然科学基金资助项目(61377031)

摘　　要：采用射频等离子体增强化学气相沉积(RF-PECVD)技术,制备了高锗含量(原子百分含量)的氢化微晶硅锗(μc-Si1-x Gex:H)材料。通过锗含量、拉曼光谱、吸收系数以及电导率测试,研究了不同离子轰击条件下μc-Si1-xGex:H薄膜的结构及光电性能。在高离子轰击条件下制备的高锗含量的μc-Si1-xGex:H薄膜显示,锗的掺入速度有所降低,晶化率和吸收系数较高且光敏性明显提高;本征层锗含量x=77%的μc-Si1-xGex:H太阳电池的量子效率在长波段显著增强且光谱响应拓展至1 300nm,此时电池效率达到3.16%。Hydrogenated microcrystalline silicon-germanium （μc-Si1-xGex：H） with high germanium （Ge） content （ atom content） has been prepared by using radio frequency plasma enhanced chemical vapor deposition（RF-PECVI））technology. The influence of the bombardment of energetic ions on the structural and electrical properties of high Ge content μc-Si1-xGex：H films was studied by the measurements of Ge content, Raman, absorption coefficient and conductivity. For high Ge content μc-Si1-xGex：H films a- chieved under high levels of ion bombardment conditions, a mitigation of the rapid increase of Ge incorporation, higher crystalline volume fractions and absorption coefficient, and a remarkable improvement of photosensitivity were showm Eventually, by using an intrinsic layer with x=0. 77, an enhancement in the quantum efficiencies at long wavelength and a spectral response extending to 1300 nm for μc-Si1-xGex：H solar cells with an efficienev of 3. 16 %were achieved.

关 键 词：微晶硅锗 离子轰击 长波响应 太阳电池 

分 类 号：TM914.4[电气工程—电力电子与电力传动]