Instrumentation and application of the ion beam analysis line of the in situ ion beam system  被引量:1

Instrumentation and application of the ion beam analysis line of the in situ ion beam system

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作  者:黄志宏 张早娣 王泽松 王浪平 付德君 

机构地区:[1]Accelerator Laboratory, Key Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education of China,School of Physics and Technology, Wuhan University [2]State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology

出  处:《Nuclear Science and Techniques》2015年第1期19-24,共6页核技术(英文)

基  金:Supported by the National Natural Science Foundation of China(No.11405117);the State Key Lab of Advanced Welding and Joining of Harbin Institute of Technology(No.AWJ-M13-03)

摘  要:An ion beam analysis system was established on a 1.7 MV tandem accelerator, enabling Rutherford backscattering(RBS), elastic recoil detection(ERD), nuclear reaction analysis(NRA) and channeling measurements. The system was tested by performing qualitative and quantitative analysis of Si, Ni/Si, Bi Fe O3:La/Si,Mo C/Mo/Si and Ti BN/Si samples. RBS of a Bi Fe O3:La film was used as system calibration. Tested by ion beam channeling, a Si(100) is of good crystallinity(χmin= 3.01%). For thin film samples, the measured thickness agrees well with simulation results by SIMNRA. In particular, composition of a Mo C/Mo/Si and Ti BN film samples were analyzed by RBS and non-Rutherford elastic backscattering.An ion beam analysis system was established on a 1.7 MV tandem accelerator, enabling Rutherford backscat- tering (RBS), elastic recoil detection (ERD), nuclear reaction analysis (NRA) and channeling measurements. The system was tested by performing qualitative and quantitative analysis of Si, Ni/Si, BiFeO3 :La/Si, MoC/Mo/Si and TiBN/Si samples. RBS of a BiFeO3:La film was used as system calibration. Tested by ion beam channeling, a Si(100) is of good crystallinity (Xmin = 3.01%). For thin film samples, the measured thick- ness agrees well with simulation results by SIMNRA. In particular, composition of a MoC/Mo/Si and TiBN film samples were analyzed by RBS and non-Rutherford elastic backscattering.

关 键 词:离子束系统 应用程序 SI(100) 分析线 原位 仪器 弹性反冲探测 BIFEO3 

分 类 号:TL503[核科学技术—核技术及应用]

 

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