逆导IGCT补偿型PNP隔离技术研究  

Research on the Isolation Technology for Reverse Conducting IGCT

作　　者：陈芳林[1] 吴煜东 张明[1] 唐龙谷[1] 陈勇民[1] 高建宁[1] 

机构地区：[1]株洲南车时代电气股份有限公司,湖南株洲412001

出　　处：《大功率变流技术》2015年第1期31-35,共5页HIGH POWER CONVERTER TECHNOLOGY

摘　　要：逆导IGCT器件的关键技术在于实现GCT与FRD间的隔离。对比现有隔离技术,提出了一种补偿型横向PNP结隔离方法;经Silvaco仿真分析后,在4英寸与6英寸GCT芯片上开展了工艺和测试验证,结果表明该方法能有效提升隔离电压,并降低了隔离区的设计与工艺难度。Isolation between GCT and FRD is the key technology in reverse conducting IGCT（RC_IGCT） developing. Compared with the existing isolation technology, a new method with compensated PNP isolation structure was proposed. Based on Silvaco simulation, process experiment and certifi cation test were carried out on RC_GCTs wafers with 4 ＂and 6＂ substrates. The results show that the new method can increase the isolation voltage and reduce the diffi culties both in the design and process.

关 键 词：IGCT GCT 逆导 FRD 隔离 

分 类 号：TN34[电子电信—物理电子学]