InGaN紫外探测器的制备与性能研究  

Study on the Fabrication and Properties of InGaN Ultraviolet Detector

作　　者：卢怡丹[1,2] 王立伟[1,2] 张燕[1] 李向阳[1] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 [2]中国科学院大学,北京100039

出　　处：《半导体光电》2014年第5期785-788,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金资助项目(61204134)

摘　　要：介绍了InGaN紫外探测器的研制过程,并给出了器件的性能。利用金属有机化学气相沉积（MOCVD）方法生长GaN外延材料,通过刻蚀、钝化、欧姆接触电极等工艺,制作了正照射单元In0.09Ga0.91N紫外探测芯片。并对该芯片进行了I-V特性、响应光谱等测试,得到芯片的暗电流Id为1.00×10-12 A,零偏压电阻R0为1.20×109Ω。该紫外探测器在360～390nm范围内有较高的响应度,峰值响应率在378nm波长处达到0.15A/W,在考虑表面反射时,内量子效率达到60%;优质因子R0A为3.4×106Ω·cm2,对应的探测率D＊=2.18×1012 cm·Hz1/2·W-1。The fabrication and characterization of InGaN ultraviolet photodetector were reported in this work. GaN multilayers were grown with metal-organic chemical vapor deposition （MOCVD）. Material etching, passivation, metal contact and other techniques were used in the manufacture of unit front-illuminated InGaN detector. The current-voltage （Ⅰ-Ⅴ） curve shows that the current and resistance at zero bias is 1.00 × 10-12 A and 1.20 × 109 Ω, respectively. A flat band spectral response is achieved in the 360 ～ 390 nm. The detector displays an unbiased response of 0.15 A/W at 378 nm, corresponding to an internal quantum efficiency of 60%. The RoA values up to 3.4 ～ 106 Ω · cmz are obtained corresponding to D＊ = 2.18 × 1012 cm · Hz1/2 · W-1.

关 键 词：GaN/InGaN P-I-N 紫外探测器 伏安特性 响应光谱 

分 类 号：TN364.2[电子电信—物理电子学]