溶液法制备环保型高分子聚合物薄膜晶体管  

Environmentally Friendly Organic Thin-Film Transistors Fabricated with Solution Process

作　　者：蔡述澄 谢应涛[1] 石强[1] 欧阳世宏[1] 方汉铿 

机构地区：[1]上海交通大学电子信息与电气工程学院电子系TFT-LCD关键材料及器件国家工程实验室,上海200240

出　　处：《半导体光电》2014年第5期824-827,842,共5页Semiconductor Optoelectronics

摘　　要：基于一种新型的稠合噻吩-吡咯并吡咯二酮聚合物半导体(PTDPPTFT4),采用溶液法工艺制作了高性能环保型、空穴型有机薄膜晶体管。通过尝试不同的半导体层退火温度及退火时间,优化了有机薄膜晶体管的性能。当采用对二甲苯溶剂,退火温度为190℃,退火时间为60min时,迁移率为2.1cm2·V-1·s-1,电流开关比大于106。通过X射线掠入射角衍射法测试,得到高温退火后聚合物薄膜的结构特点,进而揭示了退火条件改变后,薄膜晶体管拥有高迁移率的原因。Based on a new fused thiophene-diketopyrrolopyrrole polymer semiconductor （PTDPPTFT4）, high-performance p-type organic thin-film transistors （OTFTs） were fabricated using solution processing with two kinds of solvents. The performance of OTFTs was further optimized by using different temperatures and time duration for annealing the semiconductor layer. Experimental results show when the annealing temperature is 190 ℃ for 60 min, OTFTs show a mobility higher than 2.1cm2·V-1·s-1 and on-off ratio higher than 106. The structure of the polymer film after annealing was examined using the grazing incidence X-ray （GXlD） method, and the reasons for OTFTs obtaining high mobility were revealed.

关 键 词：溶液法制程 聚合物薄膜晶体管 迁移率 

分 类 号：TN321.5[电子电信—物理电子学]