Si和UO_2芯块表面ZrB_2薄膜的制备和表征  

Preparation and Characterization of ZrB_2 Thin Films Deposited on Si and UO_2 Fuel Element

作　　者：刘朋闯[1] 刘婷婷[1] 庞晓轩[1] 王庆富[1] 张鹏程[1] 王志刚 

机构地区：[1]中国工程物理研究院,四川绵阳621900 [2]中核包头核燃料元件股份有限公司,内蒙古包头014035

出　　处：《稀有金属材料与工程》2015年第3期723-726,共4页Rare Metal Materials and Engineering

摘　　要：Zr B2薄膜作为可燃中子毒物在反应堆上得以应用。本研究采用磁控溅射的方法在Si(111)和UO2芯块表面制备了Zr B2薄膜。利用扫描电镜(SEM)对薄膜的表面与截面形貌进行了观察,利用X射线衍射(XRD)仪、X射线能谱(EDS)、X射线光电子谱(XPS)对薄膜的物相及成分进行了表征,采用热循环以及划痕法对膜层与基体的结合性能进行考核。结果表明,所制备的薄膜为Zr B2薄膜且膜层较为纯净,基本只含有Zr和B 2种元素;Zr B2膜层和UO2基体结合性能良好,膜层生长致密均匀;膜层破坏的临界载荷约为455 m N。Zr B2 thin films are used as neutron burnable absorbers of nuclear reactor. In this paper, Zr B2 thin films were prepared on surfaces of Si（111） and UO2 fuel elements by magnetron sputtering. The microstructures of films were observed with scanning electron microscope（SEM）. The phase constituents and compositions of Zr B2 films were analyzed by X-ray diffraction（XRD）, X-ray energy dispersion spectroscope（EDS） and X-ray Photoelectron Spectroscopy（XPS）. This paper has focused its efforts on the adherence quality through thermal shock and nano scratch tests. Results show that films with dense growth deposited on Si（111） and UO2 substrates are uniform and well adhered to the substrates. The films are consisted of pure Zr B2, and only Zr and B elements are detected. The critical load of films is about 455 m N.

关 键 词：二硼化锆 磁控溅射 薄膜 

分 类 号：O484.1[理学—固体物理]