铌酸锂衬底上磁控溅射ITO薄膜及其光电性质研究  

Photoelectrical Properties of ITO Thin Films Prepared by Magnetron Sputtering Method on LiNbO_3 Substrate

作　　者：柯笑晗 陈云琳[1] 朱亚彬[1] 范天伟[1] 

机构地区：[1]北京交通大学理学院微纳材料及应用研究所,北京100044

出　　处：《人工晶体学报》2015年第2期368-373,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61178052);教育部博士点基金(20130009110008)

摘　　要：在铌酸锂(LN)晶体衬底上磁控溅射铟锡氧化物(ITO)薄膜,研究了射频磁控溅射制备ITO/LN薄膜的最佳工艺。采用原子力显微镜(AFM)和X射线衍射(XRD)分析了透明导电ITO膜的制备工艺参数对薄膜表面形貌和晶体结构的影响,同时应用四探针电阻率测量和紫外可见光谱测量技术对所研制的ITO/LN膜的光电性质进行了研究。结果表明,衬底温度为320℃,溅射时间50 min时制备的ITO/LN薄膜具有最佳光电性质,在该条件制备出薄膜的电阻率为3.41×10-4Ω·cm,ITO/LN平均可见光透光率可达74.38%,平均透光率比LN衬底提高了1.1%。应用该溅射条件制备了泰伯效应位相阵列器,其近场衍射成像的相对光强可达0.67。Indium tin oxide （ITO） films were studied at low temperature which doped on lithium niobate （LN） crystal substrate by magnetron sputtering method. The effects of sputtering process parameters on morphology and crystal structure of the transparent conductive ITO film surface were analyzed by atomic force microscopy（AFM） and X-ray diffraction（XRD）. The optoelectronic properties of the ITO/LN films were analyzed by four-point probe resistivity measurements and UV-visible spectroscopy. The greatest condition（ substrate temperature 320 ℃, sputtering time 50 min） of the ITO/LN film＇s resistivity is 3.41 × 10^-4 · cm, visible light transmission rate up to 74.38% , the average transmittance ratio increased to 1.1% compared with the LN substrate. Talbot phase array was fabricated under this condition, and the maximum relative intensity of the optimal spot approach to be 0.67.

关 键 词：ITO薄膜 铌酸锂 磁控溅射 光电性质 

分 类 号：O484[理学—固体物理]