温度对InAlAs/InGaAs量子级联激光器性能的影响  

Influence of Temperature on Performance of Quantum Cascade Laser for InAlAs/InGaAs

作　　者：袁浩然[1,2,3] 孙文军[1,2,3] 姚成宝[1,2,3] 王炫利 王金颖[1,2,3] 程集 

机构地区：[1]光电带隙材料教育部重点实验室 [2]黑龙江省先进功能材料与激发态重点实验室 [3]哈尔滨师范大学

出　　处：《哈尔滨师范大学自然科学学报》2015年第2期102-105,共4页Natural Science Journal of Harbin Normal University

基　　金：黑龙江省自然基金(F201202);黑龙江省教育厅骨干教师项目(1251G031);黑龙江省研究生创新科研资金项目(YJSCX2011-414HLJ)

摘　　要：设计了基于InAlAs/InGaAs材料体系的垂直跃迁型量子级联激光器有源区,其包括激射区和注入区,并用能级微带注入原理与纵向光学声子散射原理实现了量子级联激射.采用时域有限差分法计算了外加电场下的能级分布及影响激光器的重要参数,如偶极矩阵元、散射时间、增益系数、阈值电流密度、外微分量子效率等.分析了温度对阈值电流密度及激光输出功率的影响.结果表明在300K下输出功率为15m W,外微分量子效率为10%,部分参数优于相关文献.也为室温下工作的量子级联激光器设计奠定了理论基础.The vertical transition quantum cascade laser active region consisting of the lasering region and the injection region was designed by means of longitudinal optical phonon scattering and miniband injection of energy level for InGaAs/InA1As. At driving of external electric field, energy level distribution and important parameters such as dipole matrix element, scattering time, gain coefficient, threshold current density, external differential quantum efficiency was calculated by using of FDTD method. The influence of temperature on threshold current density and the laser output power was analysed. The calculation results show that the output power of designed laser was 15 mW under the 300 K, and the external differential quantum efficiency was 10%, partial parameters was better than the relative references, which also provided theoretical foundation for designation of quantum cascade lasers working at room temperature.

关 键 词：量子级联激光器 有源区 偶极矩阵元 电增益系数 

分 类 号：O47[理学—半导体物理]