Mg_xZn_(1-x)O薄膜样品制备及其结构与带隙分析  

The Preparation of Mg_xZn_(1-x)O Films and the Analysis of its Structure and Optical Bandgap

作　　者：王炫力 王金颖[1,2,3] 袁浩然[1,2,3] 姚成宝[1,2,3] 孙文军[1,2,3] 

机构地区：[1]光电带隙材料教育部重点实验室 [2]黑龙江省先进功能材料与激发态重点实验室 [3]哈尔滨师范大学

出　　处：《哈尔滨师范大学自然科学学报》2015年第2期109-112,共4页Natural Science Journal of Harbin Normal University

基　　金：黑龙江省自然基金项目(F201202);黑龙江省教育厅骨干教师项目(1251G031);黑龙江省研究生创新科研资金项目(No.YJSCX2011-414HLJ);The Natural Science Foundation of Heilongjiang Province under Grant(A201304)

摘　　要：利用共溅射技术制备了MgxZn1-xO薄膜样品,研究了Mg的掺杂浓度对其晶体结构、光学带隙的影响,退火环境与温度对其晶体结构、表面形貌的影响.通过对XRD图的分析表明,所制MgxZn1-xO薄膜样品为六角纤锌矿结构,且随着x值的增大,样品的晶格常数c逐渐减小;对比真空环境下,氧气中退火温度为500~600℃时更有利于提高样品的结晶质量.对吸收谱的分析表明随着Mg掺杂浓度增大,样品的吸收边向短波方向移动,带隙增大.The MgxZn1-xO film samples were grown by co- sputtering technique. The effect of Mg concentration x on crystalline structure and optical bandgap, the influence of annealing atmosphere and annealing temperature on the crystalline structure and morphology were investigated. The prepared MgxZn1-xO film belong to wurtzite structure and lattice constant c keep decreasing with increasing of x by analysis of X- ray diffraction pattern. The crystalline quality of the MgxZn1 -x O film annealed in O2 atmosphere at 500 -600 ℃ become better, compared with the MgxZn1 -x O film annealed in vacuum. Analysis results of absorption spectrum showed that absorption edge shifted to short wave and optical bandgap enlarged with increasing of x.

关 键 词：共溅射 MgxZn1-xO薄膜 退火 蓝移 带隙 

分 类 号：O47[理学—半导体物理]