基于集成众核的3D蒙特卡罗半导体器件模拟器  

A 3-Dimension Monte Carlo simulator for semiconductor devices based on many integrated core

作　　者：方民权[1] 张卫民[1] 张理论[1,2] 曾琅[3,4] 刘晓彦 尹龙祥 

机构地区：[1]国防科学技术大学计算机学院,湖南长沙410073 [2]国家超级计算广州中心,广东广州510006 [3]北京航空航天大学电子信息工程学院,北京100091 [4]北京航空航天大学自旋电子交叉研究中心,北京100091 [5]北京大学微纳电子学研究院,北京100871

出　　处：《计算机工程与科学》2015年第4期621-627,共7页Computer Engineering & Science

基　　金：国家自然科学基金资助项目(41375113;61272146)

摘　　要：3D蒙特卡罗器件模拟计算量大,计算量随网格与粒子数增加而急剧增加。通过分析3D蒙卡模拟加速热点和进一步可并行性,研究有效电势方法的集成众核并行方案;研究粒子自由飞行、统计模拟信息、计算表面粗糙散射等热点并行方案,最终实现基于CPU/MIC的三级并行3D蒙特卡罗器件模拟软件。实验结果显示,三级并行比单级并行获得更好的性能;当提高模拟精度时,相比单级并行,三级并行蒙特卡罗模拟加速比增加。3D Monte Carlo simulation for semiconductor devices consumes long time. Especially when grids are growing and particles are increasing, the computing scale becomes very large. By analy- zing the hotspots and the second level parallelism, the parallel scheme of the Effective Potential Method on Many Integrated Core is presented; Parallel schemes of particle free fighting, simulation information statistics and surface roughness scattering computation are researched. A 3-level parallel 3D Monte Carlo simulator for semiconductor devices is implemented and validated. Results show that the 3-level parallel program can get a better performance than the original single level parallel version. When the simulation accuracy is improved, the 3-level parallel program can get a greater speed-up ratio.

关 键 词：蒙特卡罗 半导体器件模拟 集成众核 有效电势方法 粒子自由飞行 

分 类 号：TN43[电子电信—微电子学与固体电子学]