一步蒸发法制备CIGS薄膜的晶体结构研究  

Research on Crystal Structure of CIGS Thin Films Prepared by One-step Evaporation Method

作　　者：魏丽娟[1] 刘贵山[1] 冯同 郝洪顺[1] 胡志强[1] 高文元[1] 

机构地区：[1]大连工业大学无机非金属材料工程系,新材料与材料改性省高校重点实验室,大连116034

出　　处：《人工晶体学报》2015年第3期638-642,共5页Journal of Synthetic Crystals

基　　金：国家高技术研究发展计划(863计划)(2006AA05Z417);大连市建委会资助项目(2012-456);大连市科技平台建设项目(2010-354)

摘　　要：采用一步蒸发法分别在钠钙硅玻璃基底、Mo基底上制备Cu(In,Ga)Se2(CIGS)薄膜,通过改变基底温度研究了玻璃和钼基底下CIGS薄膜晶体结构随温度变化情况,采用XRD、SEM、XRF及UV-vis对CIGS薄膜组成、结构及性能进行了表征。结果表明:在玻璃和Mo基底下制备的CIGS薄膜具有均匀一致的化学计量比组成,不同基底温度下,薄膜呈片状和柱状两种结构,片状结构的光吸收系数和禁带宽度高于柱状结构的光吸收系数和禁带宽度。Cu（ In,Ga） Se2（ CIGS） thin films were successfully prepared by one-step evaporation method on glass and Mo substrate,and the influences of substrate temperature on the crystal growth of CIGS thin film were investigated. Composition,structure and property of CIGS thin film were characterized by XRD,SEM,XRF and UV-vis. The results show that the stoichiometric composition ratio of CIGS thin films is uniform and homogeneous on glass and Mo substrates,and the films present the growth of flake structure and columnar structure at different substrate temperature,while absorption coefficient and bandgap are more pronounced in flake-like films compared to column-like films.

关 键 词：一步蒸发法 CIGS薄膜 基底温度 晶体结构 

分 类 号：TM914.4[电气工程—电力电子与电力传动]