Ag/La_(0.67)Ca_(0.33)MnO_3/p^+-Si三明治结构器件的电致阻变性能研究  

Study on the Resistance Switching Properties of Ag/La_(0. 67)Ca_(0. 33)MnO_3/p^+-Si Sandwich Devices

作　　者：韦长成 王华[1] 许积文[1] 张小文[1] 杨玲[1] 陈齐松[1] 

机构地区：[1]桂林电子科技大学材料科学与工程学院,桂林541004

出　　处：《人工晶体学报》2015年第3期649-654,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51262003)

摘　　要：采用溶胶-凝胶工艺在p+-Si基片上制备了La0.67Ca0.33Mn O3薄膜,构建了Ag/La0.67Ca0.33Mn O3/p+-Si三明治结构的阻变器件,研究了器件的电致阻变性能。结果表明:Ag/La0.67Ca0.33Mn O3/p+-Si器件具有明显的双极性阻变特性,其高阻态(HRS)与低阻态(LRS)比(HRS/LRS)高于104,器件在高阻态和低阻态的电荷传导机制分别遵循Schottky势垒导电机制与空间电荷限制电流机制(SCLC)。器件在2×103次可逆循环测试下,高、低阻态比无明显变化,表现出良好的抗疲劳特性。根据器件的高、低阻态阻抗谱,可以得到阻变效应是由器件界面的肖特基势垒的改变与器件内部缺陷填充共同作用的。La0. 67Ca0. 33 Mn O3thin films were prepared on p＋-Si substrate by sol-gel technology. The Ag /La0. 67Ca0. 33 Mn O3/ p＋-Si sandwich devices were fabricated,and the resistance switching properties of the Ag / La0. 67Ca0. 33 Mn O3/ p＋-Si devices were studied. The results show that the Ag / La0. 67Ca0. 33 Mn O3/ p＋-Si devices possess a distinct bipolar resistance switching characteristic,and the ratio between high resistance state（ HRS） and low resistance state（ LRS） is larger than 104. The dominant conduction mechanisms of HRS and LRS are Schottky barrier conduction mechanism and space-charge-limited-current conduction（ SCLC）,respectively. Under the 2 × 103 reversible switching cycles,the ratio of HRS to LRS is almost unchanged,and excellent endurance characteristic is observed. The impedance spectroscopys of HRS and LRS of the La0. 67Ca0. 33 Mn O3devices indicate that the resistance switching behavior is due to the change of Schottky barrier and the traps filled in the devices.

关 键 词：Ag/La0.67Ca0.33MnO3/p+-Si 阻变性能 传导机制 溶胶-凝胶 

分 类 号：O484[理学—固体物理]