晶体的定偏心平面CMP均匀性研究  

Study on the Uniformity of Certain Eccentricity Surface Chemical Mechanical Polishing of Crystal

作　　者：王志斌[1,2] 吴传超[1] 安永泉[1] 赵同林[1] 解琨阳 刘顺[1] 

机构地区：[1]山西省光电信息与仪器工程技术研究中心,太原030051 [2]中北大学仪器科学与动态测试教育部重点实验室,太原030051

出　　处：《人工晶体学报》2015年第3期728-733,共6页Journal of Synthetic Crystals

摘　　要：晶体的化学机械抛光(CMP)加工中存在工件的表面平整度差的问题。晶体平整度差,两块晶体在真空压合的过程中就会导致晶体被压裂甚至压碎,晶体表面出现任何微小的缺陷都会造成压合的失败,晶体的压合对于晶体表面的平整度要求非常高,因此本文针对这一现象提出一种定偏心平面CMP方式,通过此种被动驱动式平面CMP方法,合理选择CMP及偏心距的参数,使得被加工晶体(Zn Se)的表面粗糙度值达到0.846 nm,平面面形误差小于1.178μm。There are some problems during the chemical mechanical polishing of crystals like surface roughness of workpiece. If crystal flatness is poor,two crystals in a vacuum lamination time will cause the crystal to be fractured or even crushed. Any minor defects in the surface of crystal can cause the failure of lamination,and the lamination requires the high flatness. Therefore,this paper proposes a certain eccentricity CMP way for this phenomenon. Through this kind of passive driven type CMP method with reasonable selection of CMP parameters and eccentricity,the surface roughness of the workpiece is 0. 846 nm. At the same time,the error of surface flatness is less than 1. 178 μm.

关 键 词：定偏心 CMP 轨迹方程 均匀性 

分 类 号：O786[理学—晶体学]