一种新型低开关噪声低过冲CMOS缓冲器的设计  

Design of a Novel CMOS Output Buffer with Low Overshoot and Switching Noise

作　　者：邓江[1] 高兴国[1] 

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2015年第2期149-152,共4页Microelectronics

摘　　要：通过分析CMOS缓冲器过冲及开关噪声的原理,提出了一种新型的低过冲、低开关噪声的缓冲器。该缓冲器采用两种驱动级并联,降低了开关噪声。部分输出级晶体管采用缓冲器结构,控制了输出过冲。该缓冲器简单有效,不需要引入反馈结构。采用0.6μm CMOS工艺设计,经仿真验证,电路具有良好的低开关噪声和低过冲特性。The principles of overshoot and switch noise of CMOS output buffer were discussed.A novel output buffer designed for low switch noise and overshoot was proposed.Switching noise was lowered by a combination structure of two driving stages.Source followers were adopted to depress the overshoot.The buffer was simple and effective,without the necessity for introducing a feedback circuit.The proposed buffer was designed in a 0.6μm CMOS process.Simulation results showed that the buffer had less switching noise and improved overshoot.

关 键 词：输出缓冲器 过冲 开关噪声 CMOS工艺 

分 类 号：TN402[电子电信—微电子学与固体电子学]