一种800V深阱多浮空场环终端结构设计  

Design of an 800 V Deep-Well MFFLR Termination Structure

作　　者：汪德波 冯全源[1] 

机构地区：[1]西南交通大学微电子研究所,成都610031

出　　处：《微电子学》2015年第2期249-252,共4页Microelectronics

基　　金：国家自然科学基金资助项目(61271090);国家高技术研究发展计划(863计划)重大项目(2012AA012305)

摘　　要：在多浮空场环理论的基础上,采用深阱多浮空场环技术,在200μm的终端长度上实现了一种击穿电压为931V的VDMOS终端保护环结构。此终端硅表面各环电场均匀,最大表面电场强度为2.42e5V/cm,在相同条件下,该终端结构的耐压比普通多浮空场环终端结构提升了34.15%,有效提高了终端效率。A termination structure of 931 Vbreakdown voltage had been achieved by using the deep-well multifloating field ring technology with 200μm length,which was based on the theory of multiple floating field rings.The electric fields were optimized to be uniform at the silicon surface,and the maximum surface electric field was2.42e5V/cm.The breakdown voltage of the proposed termination was 34.15% higher than the structure with ordinary multiple floating field rings under the same condition,so the efficiency of the termination had been improved effectively.

关 键 词：终端 击穿电压 表面电场 

分 类 号：TN386[电子电信—物理电子学]